IXFH12N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

16.26 mm

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Number of Terminations :

3

Minimum Operating Temperature :

- 55 C

Additional Feature :

AVALANCHE RATED

Tradename :

HiPerFET

Transistor Application :

SWITCHING

Threshold Voltage :

3.5V

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

900m Ω @ 6A, 10V

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Brand :

IXYS

Turn-Off Delay Time :

50 ns

Base Product Number :

IXFH12

Power Dissipation :

380W

Rise Time :

34ns

Max Operating Temperature :

150 °C

Series :

HiPerFET™, PolarP2™

Height :

21.46 mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Avalanche Energy Rating (Eas) :

500 mJ

Mounting Type :

Through Hole

FET Feature :

--

RoHS :

Details

Pin Count :

3

Rds On Max :

900 mΩ

Published :

2001

Pbfree Code :

yes

Power Dissipation (Max) :

380W (Tc)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Product Status :

Active

Drain-source On Resistance-Max :

0.9Ohm

Channel Mode :

Enhancement

Nominal Vgs :

3.5 V

Package / Case :

TO-247-3

FET Type :

N-Channel

Manufacturer :

IXYS

Mount :

Through Hole

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

900V

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

Power Dissipation-Max (Abs) :

380 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

24A

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-247

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drain Current-Max (Abs) (ID) :

12 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Pins :

3

DS Breakdown Voltage-Min :

900 V

Max Power Dissipation :

380 W

Element Configuration :

Single

Continuous Drain Current (ID) :

12A

Min Operating Temperature :

-55 °C

Drain to Source Resistance :

900 mΩ

Supplier Device Package :

TO-247AD (IXFH)

Fall Time (Typ) :

68 ns

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Number of Terminals :

3

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Power Dissipation-Max :

380W Tc

Transistor Type :

1 N-Channel

Width :

5.3 mm

Input Capacitance :

3.08 nF

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Packaging :

Tube

Package Shape :

RECTANGULAR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

MOSFET

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

900V

Mounting Style :

Through Hole

Terminal Position :

Single