IXFH12N90P
- Mfr.Part #
- IXFH12N90P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 12A TO247AD
- Stock
- 1,069
- In Stock :
- 1,069
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 900V
- Mounting Style :
- Through Hole
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation (Max) :
- 380W (Tc)
- Product Status :
- Active
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.9Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Number of Channels :
- 1 Channel
- Supplier Device Package :
- TO-247AD (IXFH)
- Mounting Type :
- Through Hole
- Series :
- HiPerFET™, PolarP2™
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Drain to Source Breakdown Voltage :
- 900V
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Rds On Max :
- 900 mΩ
- DS Breakdown Voltage-Min :
- 900 V
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Transistor Type :
- 1 N-Channel
- Configuration :
- Single
- Height :
- 21.46 mm
- Input Capacitance :
- 3.08 nF
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Drain to Source Resistance :
- 900 mΩ
- Factory Lead Time :
- 30 Weeks
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Fall Time (Typ) :
- 68 ns
- Terminal Form :
- THROUGH-HOLE
- Maximum Operating Temperature :
- + 150 C
- Width :
- 5.3 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 12A
- JESD-609 Code :
- e1
- Surface Mount :
- No
- Length :
- 16.26 mm
- FET Type :
- N-Channel
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tradename :
- HiPerFET
- Number of Terminals :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 380 W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Nominal Vgs :
- 3.5 V
- Package / Case :
- TO-247-3
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 380 W
- Product Category :
- MOSFET
- Brand :
- IXYS
- Min Operating Temperature :
- -55 °C
- Base Product Number :
- IXFH12
- Published :
- 2001
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Operating Temperature :
- 150 °C
- JEDEC-95 Code :
- TO-247
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 50 ns
- Power Dissipation :
- 380W
- Drain Current-Max (Abs) (ID) :
- 12 A
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 24A
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 6A, 10V
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 3080pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 34ns
- Threshold Voltage :
- 3.5V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 380W Tc
- Reach Compliance Code :
- Compliant
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXFH12N90P

N-Channel Tube 900m Ω @ 6A, 10V ±30V 3080pF @ 25V 56nC @ 10V 900V TO-247-3
IXFH12N90P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 3080pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 900V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 12 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 900 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900 V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH12N90P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 900 mΩ
a threshold voltage of 3.5V
a 900V drain to source voltage (Vdss)
IXFH12N90P Applications
There are a lot of IXYS
IXFH12N90P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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