IXFH12N90P

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Mfr.Part #
IXFH12N90P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 12A TO247AD
Stock
1,069
In Stock :
1,069

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
900V
Mounting Style :
Through Hole
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
380W (Tc)
Product Status :
Active
Packaging :
Tube
Drain-source On Resistance-Max :
0.9Ohm
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Number of Channels :
1 Channel
Supplier Device Package :
TO-247AD (IXFH)
Mounting Type :
Through Hole
Series :
HiPerFET™, PolarP2™
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Drain to Source Breakdown Voltage :
900V
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
500 mJ
Rds On Max :
900 mΩ
DS Breakdown Voltage-Min :
900 V
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
30V
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Transistor Type :
1 N-Channel
Configuration :
Single
Height :
21.46 mm
Input Capacitance :
3.08 nF
Package Shape :
RECTANGULAR
Vgs (Max) :
±30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
Qualification Status :
Not Qualified
Number of Pins :
3
Drain to Source Resistance :
900 mΩ
Factory Lead Time :
30 Weeks
Manufacturer :
IXYS
Pin Count :
3
Fall Time (Typ) :
68 ns
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+ 150 C
Width :
5.3 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
12A
JESD-609 Code :
e1
Surface Mount :
No
Length :
16.26 mm
FET Type :
N-Channel
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Tradename :
HiPerFET
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
380 W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Nominal Vgs :
3.5 V
Package / Case :
TO-247-3
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
380 W
Product Category :
MOSFET
Brand :
IXYS
Min Operating Temperature :
-55 °C
Base Product Number :
IXFH12
Published :
2001
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Operating Temperature :
150 °C
JEDEC-95 Code :
TO-247
Mount :
Through Hole
Turn-Off Delay Time :
50 ns
Power Dissipation :
380W
Drain Current-Max (Abs) (ID) :
12 A
Terminal Position :
Single
ECCN Code :
EAR99
Element Configuration :
Single
Transistor Polarity :
N-Channel
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
24A
Minimum Operating Temperature :
- 55 C
Rds On (Max) @ Id, Vgs :
900m Ω @ 6A, 10V
REACH SVHC :
No SVHC
Input Capacitance (Ciss) (Max) @ Vds :
3080pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
34ns
Threshold Voltage :
3.5V
Pbfree Code :
yes
Power Dissipation-Max :
380W Tc
Reach Compliance Code :
Compliant
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Datasheets
IXFH12N90P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N90P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IXFH12N90P pinout, IXFH12N90P datasheet PDF, IXFH12N90P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N90P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH12N90P


N-Channel Tube 900m Ω @ 6A, 10V ±30V 3080pF @ 25V 56nC @ 10V 900V TO-247-3

IXFH12N90P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 3080pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 900V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 12 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 900 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900 V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH12N90P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 900 mΩ
a threshold voltage of 3.5V
a 900V drain to source voltage (Vdss)


IXFH12N90P Applications


There are a lot of IXYS
IXFH12N90P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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