IXFH12N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Terminal Form :

THROUGH-HOLE

Product Type :

MOSFET

Continuous Drain Current (ID) :

12A

Tradename :

HiPerFET

Turn-Off Delay Time :

50 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

24A

Minimum Operating Temperature :

- 55 C

Pin Count :

3

Max Operating Temperature :

150 °C

Rise Time :

34ns

Drain Current-Max (Abs) (ID) :

12 A

Transistor Element Material :

SILICON

Product Category :

MOSFET

Number of Elements :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Fall Time (Typ) :

68 ns

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

900V

Case Connection :

DRAIN

Packaging :

Tube

Threshold Voltage :

3.5V

Series :

HiPerFET™, PolarP2™

Brand :

IXYS

Package Shape :

RECTANGULAR

Published :

2001

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Channel Mode :

Enhancement

Max Power Dissipation :

380 W

Input Capacitance :

3.08 nF

Supplier Device Package :

TO-247AD (IXFH)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

380W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Package :

Tube

Rds On Max :

900 mΩ

Power Dissipation :

380W

Drain-source On Resistance-Max :

0.9Ohm

DS Breakdown Voltage-Min :

900 V

Length :

16.26 mm

Avalanche Energy Rating (Eas) :

500 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

30V

Min Operating Temperature :

-55 °C

JESD-609 Code :

e1

Number of Terminals :

3

Drain to Source Voltage (Vdss) :

900V

RoHS :

Details

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rds On (Max) @ Id, Vgs :

900m Ω @ 6A, 10V

Mount :

Through Hole

Surface Mount :

No

Number of Terminations :

3

Maximum Operating Temperature :

+ 150 C

Drain to Source Resistance :

900 mΩ

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Product Status :

Active

Width :

5.3 mm

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Power Dissipation-Max (Abs) :

380 W

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Number of Channels :

1 Channel

Nominal Vgs :

3.5 V

Base Product Number :

IXFH12

Number of Pins :

3

FET Feature :

--

REACH SVHC :

No SVHC

Height :

21.46 mm

JEDEC-95 Code :

TO-247

Reach Compliance Code :

Compliant

Package / Case :

TO-247-3

Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Terminal Position :

Single

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

380W (Tc)

Transistor Type :

1 N-Channel

Factory Lead Time :

30 Weeks

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes