IXFH12N90
- Mfr.Part #
- IXFH12N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 12A TO247AD
- Stock
- 24,291
- In Stock :
- 24,291
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Voltage - Rated DC :
- 900V
- Supplier Device Package :
- TO-247AD (IXFH)
- Power Dissipation Ambient-Max :
- 300 W
- Width :
- 5.3 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 900 V
- Rise Time :
- 12ns
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 21.46 mm
- Pulsed Drain Current-Max (IDM) :
- 48A
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 12A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.9 Ω
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 18 ns
- Mount :
- Through Hole
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Through Hole
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Brand :
- IXYS
- Surface Mount :
- No
- Length :
- 16.26 mm
- Power Dissipation-Max (Abs) :
- 300 W
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HyperFET
- Transistor Polarity :
- N-Channel
- Manufacturer :
- IXYS
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 900V
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Series :
- HiPerFET™
- JEDEC-95 Code :
- TO-247AD
- Product Category :
- MOSFET
- Packaging :
- Tube
- Current Rating :
- 12A
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 900mOhm
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 900V
- Number of Pins :
- 3
- Power Dissipation :
- 300W
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 300W (Tc)
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 6A, 10V
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 51 ns
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 12 A
- Case Connection :
- DRAIN
- Published :
- 2003
- Power Dissipation-Max :
- 300W Tc
- Channel Mode :
- Enhancement
- Lead Free :
- Lead Free
- Base Product Number :
- IXFH12
- Element Configuration :
- Single
- Datasheets
- IXFH12N90

N-Channel Tube 900m Ω @ 6A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3
IXFH12N90 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.A device can conduct a maximum continuous current of [12 A] according to its drain current.It is [51 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 48A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 900 V to maintain normal operation.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH12N90 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 48A.
a 900V drain to source voltage (Vdss)
IXFH12N90 Applications
There are a lot of IXYS
IXFH12N90 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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