IXFH12N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

12ns

Terminal Position :

Single

Number of Elements :

1

Pbfree Code :

yes

Series :

HiPerFET™

Transistor Type :

1 N-Channel

Tradename :

HyperFET

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

48A

Pin Count :

3

Drain-source On Resistance-Max :

0.9 Ω

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Base Product Number :

IXFH12

Number of Terminations :

3

Power Dissipation-Max :

300W Tc

Terminal Form :

THROUGH-HOLE

Radiation Hardening :

No

Number of Terminals :

3

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Supplier Device Package :

TO-247AD (IXFH)

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

900V

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

900V

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS

Width :

5.3 mm

Fall Time (Typ) :

18 ns

Polarity/Channel Type :

N-Channel

Resistance :

900mOhm

Configuration :

Single

Rds On (Max) @ Id, Vgs :

900m Ω @ 6A, 10V

Brand :

IXYS

FET Feature :

--

Mount :

Through Hole

Power Dissipation Ambient-Max :

300 W

Operating Temperature :

-55°C~150°C TJ

Height :

21.46 mm

DS Breakdown Voltage-Min :

900 V

Current Rating :

12A

Maximum Operating Temperature :

+ 150 C

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

300 W

JEDEC-95 Code :

TO-247AD

Mounting Type :

Through Hole

Case Connection :

DRAIN

Channel Mode :

Enhancement

Length :

16.26 mm

Published :

2003

Continuous Drain Current (ID) :

12A

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Turn-Off Delay Time :

51 ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

300W

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Power Dissipation (Max) :

300W (Tc)

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

12 A

Product Status :

Active

Voltage - Rated DC :

900V

Mounting Style :

Through Hole

Surface Mount :

No

Element Configuration :

Single

Package / Case :

TO-247-3

RoHS :

Details

Vgs(th) (Max) @ Id :

4.5V @ 4mA