IXFH12N90

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Mfr.Part #
IXFH12N90
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 12A TO247AD
Stock
24,291
In Stock :
24,291

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Package :
Tube
Voltage - Rated DC :
900V
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation Ambient-Max :
300 W
Width :
5.3 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
DS Breakdown Voltage-Min :
900 V
Rise Time :
12ns
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
21.46 mm
Pulsed Drain Current-Max (IDM) :
48A
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
12A
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
Drain-source On Resistance-Max :
0.9 Ω
Terminal Position :
Single
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
18 ns
Mount :
Through Hole
Pin Count :
3
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
FET Feature :
--
Brand :
IXYS
Surface Mount :
No
Length :
16.26 mm
Power Dissipation-Max (Abs) :
300 W
Additional Feature :
AVALANCHE RATED
Tradename :
HyperFET
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
900V
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Series :
HiPerFET™
JEDEC-95 Code :
TO-247AD
Product Category :
MOSFET
Packaging :
Tube
Current Rating :
12A
Operating Mode :
ENHANCEMENT MODE
Resistance :
900mOhm
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Product Status :
Active
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Transistor Type :
1 N-Channel
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
900V
Number of Pins :
3
Power Dissipation :
300W
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Package / Case :
TO-247-3
Power Dissipation (Max) :
300W (Tc)
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Rds On (Max) @ Id, Vgs :
900m Ω @ 6A, 10V
Number of Terminals :
3
Turn-Off Delay Time :
51 ns
RoHS :
Details
Drain Current-Max (Abs) (ID) :
12 A
Case Connection :
DRAIN
Published :
2003
Power Dissipation-Max :
300W Tc
Channel Mode :
Enhancement
Lead Free :
Lead Free
Base Product Number :
IXFH12
Element Configuration :
Single
Datasheets
IXFH12N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N90 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, IXFH12N90 pinout, IXFH12N90 datasheet PDF, IXFH12N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH12N90


N-Channel Tube 900m Ω @ 6A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3

IXFH12N90 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.A device can conduct a maximum continuous current of [12 A] according to its drain current.It is [51 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 48A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 900 V to maintain normal operation.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFH12N90 Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 48A.
a 900V drain to source voltage (Vdss)


IXFH12N90 Applications


There are a lot of IXYS
IXFH12N90 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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