IXFH12N80P
- Mfr.Part #
- IXFH12N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 12A TO247AD
- Stock
- 13,605
- In Stock :
- 13,605
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Power Dissipation-Max :
- 360W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Channels :
- 1 Channel
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 800V
- JESD-30 Code :
- R-PSFM-T3
- Mount :
- Through Hole
- FET Feature :
- --
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 36A
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Number of Elements :
- 1
- Packaging :
- Tube
- Transistor Type :
- 1 N-Channel
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 500mA, 10V
- Mounting Style :
- Through Hole
- Factory Lead Time :
- 30 Weeks
- Continuous Drain Current (ID) :
- 12A
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 360W (Tc)
- Power Dissipation :
- 360W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Tradename :
- HiPerFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 25 ns
- Series :
- HiPerFET™, PolarHT™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 800 V
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Subcategory :
- MOSFETs
- JEDEC-95 Code :
- TO-247AD
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 800V
- Turn-Off Delay Time :
- 70 ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Product Category :
- MOSFET
- Vgs (Max) :
- ±30V
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- Brand :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Surface Mount :
- No
- Package :
- Tube
- Configuration :
- Single
- Rise Time :
- 26ns
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-247AD (IXFH)
- Base Product Number :
- IXFH12
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Package / Case :
- TO-247-3
- Drain-source On Resistance-Max :
- 0.85Ohm
- Datasheets
- IXFH12N80P

N-Channel Tube 850m Ω @ 500mA, 10V ±30V 2800pF @ 25V 51nC @ 10V 800V TO-247-3
IXFH12N80P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 36A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH12N80P Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 36A.
a 800V drain to source voltage (Vdss)
IXFH12N80P Applications
There are a lot of IXYS
IXFH12N80P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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