IXFH12N80P

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Mfr.Part #
IXFH12N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 12A TO247AD
Stock
13,605
In Stock :
13,605

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Power Dissipation-Max :
360W Tc
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 25V
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
FET Type :
N-Channel
Manufacturer :
IXYS
Product Status :
Active
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
800V
JESD-30 Code :
R-PSFM-T3
Mount :
Through Hole
FET Feature :
--
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
36A
Avalanche Energy Rating (Eas) :
800 mJ
Number of Elements :
1
Packaging :
Tube
Transistor Type :
1 N-Channel
Package Shape :
RECTANGULAR
JESD-609 Code :
e1
Pin Count :
3
Rds On (Max) @ Id, Vgs :
850m Ω @ 500mA, 10V
Mounting Style :
Through Hole
Factory Lead Time :
30 Weeks
Continuous Drain Current (ID) :
12A
Mounting Type :
Through Hole
Power Dissipation (Max) :
360W (Tc)
Power Dissipation :
360W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Published :
2006
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Tradename :
HiPerFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
25 ns
Series :
HiPerFET™, PolarHT™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
800 V
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Subcategory :
MOSFETs
JEDEC-95 Code :
TO-247AD
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
800V
Turn-Off Delay Time :
70 ns
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Product Category :
MOSFET
Vgs (Max) :
±30V
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Brand :
IXYS
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Surface Mount :
No
Package :
Tube
Configuration :
Single
Rise Time :
26ns
Qualification Status :
Not Qualified
Terminal Position :
Single
Pbfree Code :
yes
Supplier Device Package :
TO-247AD (IXFH)
Base Product Number :
IXFH12
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Package / Case :
TO-247-3
Drain-source On Resistance-Max :
0.85Ohm
Datasheets
IXFH12N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-247-3, IXFH12N80P pinout, IXFH12N80P datasheet PDF, IXFH12N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH12N80P


N-Channel Tube 850m Ω @ 500mA, 10V ±30V 2800pF @ 25V 51nC @ 10V 800V TO-247-3

IXFH12N80P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 36A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH12N80P Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 36A.
a 800V drain to source voltage (Vdss)


IXFH12N80P Applications


There are a lot of IXYS
IXFH12N80P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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