IXFH12N50F
- Mfr.Part #
- IXFH12N50F
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO247
- Stock
- 12,799
- In Stock :
- 12,799
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Power Dissipation (Max) :
- 180W (Tc)
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 6A, 10V
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Power Dissipation-Max :
- 180W Tc
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- FET Feature :
- --
- Manufacturer :
- IXYS Corporation
- Series :
- HiPerRF™
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 400mOhm
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 12A
- Pulsed Drain Current-Max (IDM) :
- 48A
- Element Configuration :
- Single
- Rise Time :
- 14ns
- Surface Mount :
- No
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.4 Ω
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 500 V
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 3
- Base Product Number :
- IXFH12
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1870pF @ 25V
- Turn-Off Delay Time :
- 28 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Min Operating Temperature :
- -55 °C
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Reach Compliance Code :
- Compliant
- ECCN Code :
- EAR99
- Schedule B :
- 8541290080
- Max Power Dissipation :
- 180 W
- Fall Time (Typ) :
- 8 ns
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Obsolete
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 180W
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- JEDEC-95 Code :
- TO-247
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-247 (IXFH)
- Package / Case :
- TO-247-3
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Package :
- Tube
- Drain to Source Resistance :
- 400 mΩ
- Published :
- 2001
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 10 Weeks
- Datasheets
- IXFH12N50F

N-Channel Tube 400m Ω @ 6A, 10V ±20V 1870pF @ 25V 54nC @ 10V 500V TO-247-3
IXFH12N50F Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1870pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 48A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 400 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH12N50F Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 400 mΩ
a 500V drain to source voltage (Vdss)
IXFH12N50F Applications
There are a lot of IXYS
IXFH12N50F applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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