IXFH12N50F

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Mfr.Part #
IXFH12N50F
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 12A TO247
Stock
12,799
In Stock :
12,799

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Number of Terminals :
3
Package / Case :
TO-247-3
Continuous Drain Current (ID) :
12A
Drain-source On Resistance-Max :
0.4 Ω
Pbfree Code :
yes
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
400m Ω @ 6A, 10V
Qualification Status :
Not Qualified
Factory Lead Time :
10 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
--
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Max Power Dissipation :
180 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
500V
Supplier Device Package :
TO-247 (IXFH)
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Pin Count :
3
REACH SVHC :
No SVHC
Series :
HiPerRF™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
3
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
500 V
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS Corporation
Surface Mount :
No
RoHS :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
48A
Min Operating Temperature :
-55 °C
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Schedule B :
8541290080
Transistor Application :
SWITCHING
Package :
Tube
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
RoHS Status :
RoHS Compliant
Rise Time :
14ns
Gate to Source Voltage (Vgs) :
20V
Additional Feature :
AVALANCHE RATED
Resistance :
400mOhm
Input Capacitance (Ciss) (Max) @ Vds :
1870pF @ 25V
Vgs (Max) :
±20V
Drain to Source Resistance :
400 mΩ
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Power Dissipation :
180W
JEDEC-95 Code :
TO-247
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
180W (Tc)
Power Dissipation-Max :
180W Tc
Base Product Number :
IXFH12
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
300 mJ
Published :
2001
Package Shape :
RECTANGULAR
Max Operating Temperature :
150 °C
Fall Time (Typ) :
8 ns
Turn-Off Delay Time :
28 ns
Packaging :
Tube
Drain to Source Voltage (Vdss) :
500V
JESD-609 Code :
e1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N50F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, IXFH12N50F pinout, IXFH12N50F datasheet PDF, IXFH12N50F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH12N50F


N-Channel Tube 400m Ω @ 6A, 10V ±20V 1870pF @ 25V 54nC @ 10V 500V TO-247-3

IXFH12N50F Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1870pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 48A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 400 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH12N50F Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 400 mΩ
a 500V drain to source voltage (Vdss)


IXFH12N50F Applications


There are a lot of IXYS
IXFH12N50F applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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