IXFH12N50F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS Corporation

Package / Case :

TO-247-3

Terminal Form :

THROUGH-HOLE

Max Operating Temperature :

150 °C

Product Status :

Obsolete

Pbfree Code :

yes

Transistor Element Material :

SILICON

Packaging :

Tube

Package :

Tube

Power Dissipation :

180W

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Series :

HiPerRF™

FET Type :

N-Channel

Element Configuration :

Single

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

12A

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation (Max) :

180W (Tc)

Drain to Source Resistance :

400 mΩ

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

14ns

Min Operating Temperature :

-55 °C

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

500 V

Resistance :

400mOhm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Schedule B :

8541290080

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Supplier Device Package :

TO-247 (IXFH)

Pulsed Drain Current-Max (IDM) :

48A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

180 W

Number of Terminals :

3

Drain to Source Voltage (Vdss) :

500V

Rds On (Max) @ Id, Vgs :

400m Ω @ 6A, 10V

Number of Pins :

3

Pin Count :

3

Qualification Status :

Not Qualified

Base Product Number :

IXFH12

Published :

2001

Number of Terminations :

3

Case Connection :

DRAIN

Fall Time (Typ) :

8 ns

Drain-source On Resistance-Max :

0.4 Ω

Power Dissipation-Max :

180W Tc

Avalanche Energy Rating (Eas) :

300 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

500V

JESD-609 Code :

e1

Factory Lead Time :

10 Weeks

Package Shape :

RECTANGULAR

Turn-Off Delay Time :

28 ns

JEDEC-95 Code :

TO-247

REACH SVHC :

No SVHC