IXFH12N100F

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Mfr.Part #
IXFH12N100F
Manufacturer
Littelfuse
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 1000V 12A TO247AD
Stock
42,538
In Stock :
42,538

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Power Dissipation-Max :
300W Tc
Terminal Position :
Single
Number of Elements :
1
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Rise Time :
9.8ns
Package :
Tube
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
12A
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Vgs (Max) :
±20V
Product Status :
Active
Threshold Voltage :
3V
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
1.05 Ω
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Packaging :
Tube
Base Product Number :
IXFH12
Turn-Off Delay Time :
31 ns
Surface Mount :
No
Published :
2005
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
1kV
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Qualification Status :
Not Qualified
Element Configuration :
Single
Number of Pins :
3
Fall Time (Typ) :
12 ns
Series :
HiPerRF™
Power Dissipation (Max) :
300W (Tc)
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
JEDEC-95 Code :
TO-247
REACH SVHC :
No SVHC
Pulsed Drain Current-Max (IDM) :
48A
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
FET Feature :
--
Factory Lead Time :
30 Weeks
Lead Free :
Lead Free
Supplier Device Package :
TO-247AD (IXFH)
Channel Mode :
Enhancement
JESD-609 Code :
e1
Mount :
Through Hole
DS Breakdown Voltage-Min :
1000 V
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Number of Terminals :
3
Power Dissipation :
300W
Mounting Style :
Through Hole
Drain to Source Voltage (Vdss) :
1000V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-3P-3 Full Pack
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS Corporation
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
1000 mJ
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Datasheets
IXFH12N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N100F from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-3P-3 Full Pack, IXFH12N100F pinout, IXFH12N100F datasheet PDF, IXFH12N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH12N100F


N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 2700pF @ 25V 77nC @ 10V 1000V TO-3P-3 Full Pack

IXFH12N100F Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 48A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH12N100F Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
a threshold voltage of 3V
a 1000V drain to source voltage (Vdss)


IXFH12N100F Applications


There are a lot of IXYS
IXFH12N100F applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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