IXFH12N100F

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Mfr.Part #
IXFH12N100F
Manufacturer
Littelfuse
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 1000V 12A TO247AD
Stock
42,538
In Stock :
42,538

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Continuous Drain Current (ID) :
12A
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Lead Free :
Lead Free
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Power Dissipation-Max :
300W Tc
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Pbfree Code :
yes
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
1000V
Channel Mode :
Enhancement
Published :
2005
Drain-source On Resistance-Max :
1.05 Ω
JEDEC-95 Code :
TO-247
Element Configuration :
Single
Supplier Device Package :
TO-247AD (IXFH)
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Series :
HiPerRF™
Transistor Polarity :
N-Channel
Transistor Element Material :
SILICON
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 6A, 10V
Number of Elements :
1
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
1000 mJ
DS Breakdown Voltage-Min :
1000 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Package / Case :
TO-3P-3 Full Pack
Fall Time (Typ) :
12 ns
Rise Time :
9.8ns
Gate to Source Voltage (Vgs) :
20V
REACH SVHC :
No SVHC
Mount :
Through Hole
Case Connection :
DRAIN
Power Dissipation :
300W
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Product Status :
Active
JESD-609 Code :
e1
Surface Mount :
No
Base Product Number :
IXFH12
JESD-30 Code :
R-PSFM-T3
ECCN Code :
EAR99
Power Dissipation (Max) :
300W (Tc)
Pulsed Drain Current-Max (IDM) :
48A
Threshold Voltage :
3V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Turn-Off Delay Time :
31 ns
Package :
Tube
Package Shape :
RECTANGULAR
Radiation Hardening :
No
Maximum Operating Temperature :
+ 150 C
Drain to Source Breakdown Voltage :
1kV
Factory Lead Time :
30 Weeks
Vgs (Max) :
±20V
Packaging :
Tube
Number of Terminations :
3
Manufacturer :
IXYS Corporation
Datasheets
IXFH12N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N100F from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3 Full Pack, Number of Terminations:3, IXFH12N100F pinout, IXFH12N100F datasheet PDF, IXFH12N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH12N100F


N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 2700pF @ 25V 77nC @ 10V 1000V TO-3P-3 Full Pack

IXFH12N100F Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 48A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH12N100F Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
a threshold voltage of 3V
a 1000V drain to source voltage (Vdss)


IXFH12N100F Applications


There are a lot of IXYS
IXFH12N100F applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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