IXFH12N100F
- Mfr.Part #
- IXFH12N100F
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12A TO247AD
- Stock
- 42,538
- In Stock :
- 42,538
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Terminal Position :
- Single
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 9.8ns
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 12A
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 25V
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Threshold Voltage :
- 3V
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 1.05 Ω
- Rds On (Max) @ Id, Vgs :
- 1.05 Ω @ 6A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Packaging :
- Tube
- Base Product Number :
- IXFH12
- Turn-Off Delay Time :
- 31 ns
- Surface Mount :
- No
- Published :
- 2005
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 1kV
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Number of Pins :
- 3
- Fall Time (Typ) :
- 12 ns
- Series :
- HiPerRF™
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-247
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 48A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- FET Feature :
- --
- Factory Lead Time :
- 30 Weeks
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-247AD (IXFH)
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 1000 V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Number of Terminals :
- 3
- Power Dissipation :
- 300W
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 1000V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-3P-3 Full Pack
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS Corporation
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- IXFH12N100F

N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 2700pF @ 25V 77nC @ 10V 1000V TO-3P-3 Full Pack
IXFH12N100F Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 48A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH12N100F Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
a threshold voltage of 3V
a 1000V drain to source voltage (Vdss)
IXFH12N100F Applications
There are a lot of IXYS
IXFH12N100F applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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