IXFH12N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Status :

Active

REACH SVHC :

No SVHC

Pbfree Code :

yes

Fall Time (Typ) :

12 ns

Pin Count :

3

Continuous Drain Current (ID) :

12A

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

1000V

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Number of Pins :

3

Drain-source On Resistance-Max :

1.05 Ω

Surface Mount :

No

Terminal Position :

Single

Radiation Hardening :

No

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Power Dissipation :

300W

Reach Compliance Code :

Compliant

Number of Terminals :

3

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

TO-247AD (IXFH)

JESD-609 Code :

e1

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 6A, 10V

Threshold Voltage :

3V

Package / Case :

TO-3P-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

30 Weeks

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Series :

HiPerRF™

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Package :

Tube

Drain to Source Breakdown Voltage :

1kV

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Power Dissipation (Max) :

300W (Tc)

Maximum Operating Temperature :

+ 150 C

Case Connection :

DRAIN

Packaging :

Tube

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Channel Mode :

Enhancement

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Avalanche Energy Rating (Eas) :

1000 mJ

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

48A

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Published :

2005

Turn-Off Delay Time :

31 ns

Rise Time :

9.8ns

Base Product Number :

IXFH12

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Manufacturer :

IXYS Corporation

DS Breakdown Voltage-Min :

1000 V

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-247

Polarity/Channel Type :

N-Channel