IXFC96N15P
- Mfr.Part #
- IXFC96N15P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 42A ISOPLUS220
- Stock
- 9,761
- In Stock :
- 9,761
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Isolation Voltage :
- 2.5kV
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 42A
- Package / Case :
- ISOPLUS220™
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 150V
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 48A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Case Connection :
- Isolated
- JESD-30 Code :
- R-PSIP-T3
- Drain to Source Voltage (Vdss) :
- 150V
- Nominal Vgs :
- 5 V
- DS Breakdown Voltage-Min :
- 150 V
- Pin Count :
- 3
- Product Status :
- Obsolete
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- N-Channel
- Published :
- 2006
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 66 ns
- Power Dissipation (Max) :
- 120W (Tc)
- Transistor Application :
- SWITCHING
- Reverse Recovery Time :
- 200 ns
- Series :
- PolarHT™ HiPerFET™
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.026ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 120W Tc
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Threshold Voltage :
- 5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package :
- Box
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 120W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFC96N15
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Supplier Device Package :
- ISOPLUS220™
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 18 ns
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- THROUGH-HOLE
- Termination :
- Through Hole
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Number of Pins :
- 220
- Manufacturer :
- IXYS Corporation
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 33ns
- Element Configuration :
- Single
- Packaging :
- Tube
- Number of Elements :
- 1
- Dual Supply Voltage :
- 150V
- FET Type :
- N-Channel
- Datasheets
- IXFC96N15P

N-Channel Tube 26m Ω @ 48A, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V ISOPLUS220™
IXFC96N15P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3500pF @ 25V.This device has a continuous drain current (ID) of [42A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=150V, the drain-source breakdown voltage is 150V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 66 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150 V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFC96N15P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)
IXFC96N15P Applications
There are a lot of IXYS
IXFC96N15P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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