IXFC96N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

5V

Power Dissipation (Max) :

120W (Tc)

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Nominal Vgs :

5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

26m Ω @ 48A, 10V

Mounting Type :

Through Hole

Package :

Box

Termination :

Through Hole

Packaging :

Tube

Drain to Source Breakdown Voltage :

150V

Surface Mount :

No

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

DS Breakdown Voltage-Min :

150 V

Manufacturer :

IXYS Corporation

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

150V

Number of Pins :

220

Pulsed Drain Current-Max (IDM) :

250A

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Reverse Recovery Time :

200 ns

Pbfree Code :

yes

Series :

PolarHT™ HiPerFET™

Mount :

Through Hole

Pin Count :

3

Supplier Device Package :

ISOPLUS220™

Published :

2006

FET Feature :

--

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs (Max) :

±20V

Number of Terminals :

3

REACH SVHC :

No SVHC

Product Status :

Obsolete

Dual Supply Voltage :

150V

Power Dissipation-Max :

120W Tc

Case Connection :

Isolated

Base Product Number :

IXFC96N15

Avalanche Energy Rating (Eas) :

1000 mJ

Isolation Voltage :

2.5kV

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

66 ns

Rise Time :

33ns

Number of Elements :

1

Drain-source On Resistance-Max :

0.026ohm

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

5V @ 4mA

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

120W

Terminal Form :

THROUGH-HOLE

Fall Time (Typ) :

18 ns

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

42A

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

FET Type :

N-Channel

Package / Case :

ISOPLUS220™