IXFC10N80P
- Mfr.Part #
- IXFC10N80P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 5A ISOPLUS220
- Stock
- 20,663
- In Stock :
- 20,663
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 800 V
- Drain to Source Resistance :
- 1.2Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- PolarHV™
- Drain to Source Breakdown Voltage :
- 800V
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 800V
- Number of Terminals :
- 3
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Published :
- 2013
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 5A
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- --
- Product Status :
- Obsolete
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0012 Ω
- Max Power Dissipation :
- 100W
- Packaging :
- Tube
- Supplier Device Package :
- ISOPLUS220™
- Number of Pins :
- 220
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- --
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- Base Product Number :
- IXFC10N80
- JESD-609 Code :
- e1
- Vgs(th) (Max) @ Id :
- --
- Operating Temperature :
- --
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Number of Elements :
- 1
- Mount :
- Through Hole
- Package / Case :
- ISOPLUS220™
- Operating Temperature (Max) :
- 150°C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Power Dissipation :
- 100W
- Pin Count :
- 3
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 5A
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- IXFC10N80P

N-Channel Tube -- 800V ISOPLUS220™
IXFC10N80P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [5A] according to its drain current.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1.2Ohm.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).
IXFC10N80P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 800V voltage
single MOSFETs transistor is 1.2Ohm
a 800V drain to source voltage (Vdss)
IXFC10N80P Applications
There are a lot of IXYS
IXFC10N80P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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