IXFC10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

5A

Case Connection :

Isolated

Power Dissipation :

100W

Package / Case :

ISOPLUS220™

Drain to Source Voltage (Vdss) :

800V

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

RoHS Status :

RoHS Compliant

Product Status :

Obsolete

Vgs(th) (Max) @ Id :

--

Operating Temperature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

800V

Surface Mount :

No

Drain to Source Resistance :

1.2Ohm

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Packaging :

Tube

DS Breakdown Voltage-Min :

800 V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

--

Power Dissipation (Max) :

--

JESD-609 Code :

e1

FET Feature :

--

Qualification Status :

Not Qualified

Operating Temperature (Max) :

150°C

Base Product Number :

IXFC10N80

JESD-30 Code :

R-PSIP-T3

Manufacturer :

IXYS Corporation

Package :

Tube

Published :

2013

Pin Count :

3

Drain Current-Max (Abs) (ID) :

5A

Avalanche Energy Rating (Eas) :

750 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

3

Reach Compliance Code :

Compliant

Number of Elements :

1

Series :

PolarHV™

Number of Pins :

220

Supplier Device Package :

ISOPLUS220™

Number of Terminations :

3

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Max Power Dissipation :

100W

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0012 Ω