IXFC15N80Q
Or copy the link below:
- Mfr.Part #
- IXFC15N80Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A ISOPLUS220
- Stock
- 4,207
- In Stock ：
- 4,207
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2003
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Power Dissipation-Max :
- 230W Tc
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- DS Breakdown Voltage-Min :
- 800 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- Isolated
- Turn-Off Delay Time :
- 53 ns
- Pulsed Drain Current-Max (IDM) :
- 60A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -40°C~150°C TJ
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 800V
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.65Ohm
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Package / Case :
- ISOPLUS220™
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Series :
- HiPerFET™
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 16 ns
- Product Status :
- Obsolete
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Continuous Drain Current (ID) :
- 13A
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 800V
- Power Dissipation (Max) :
- 230W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Supplier Device Package :
- ISOPLUS220™
- Manufacturer :
- IXYS Corporation
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 500mA, 10V
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSIP-T3
- Rise Time :
- 27ns
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 25V
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFC15N80
- Power Dissipation :
- 230W
- Datasheets
- IXFC15N80Q
N-Channel Tube 650m Ω @ 500mA, 10V ±20V 4300pF @ 25V 90nC @ 10V 800V ISOPLUS220™
IXFC15N80Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFC15N80Q Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a 800V drain to source voltage (Vdss)
IXFC15N80Q Applications
There are a lot of IXYS
IXFC15N80Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
- Follow Us
-
- Payment
-
- Subscribe
- Certification
-
-
