IXFC15N80Q
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- Mfr.Part #
- IXFC15N80Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A ISOPLUS220
- Stock
- 4,207
- In Stock ：
- 4,207
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Fall Time (Typ) :
- 16 ns
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 27ns
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Drain to Source Breakdown Voltage :
- 800V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- ISOPLUS220™
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFC15N80
- Power Dissipation (Max) :
- 230W (Tc)
- Product Status :
- Obsolete
- Number of Pins :
- 3
- Package / Case :
- ISOPLUS220™
- Pin Count :
- 3
- Manufacturer :
- IXYS Corporation
- Number of Terminals :
- 3
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.65Ohm
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Published :
- 2003
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 13A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Power Dissipation :
- 230W
- Power Dissipation-Max :
- 230W Tc
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 800 V
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 60A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 800V
- JESD-30 Code :
- R-PSIP-T3
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Series :
- HiPerFET™
- Turn-Off Delay Time :
- 53 ns
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 500mA, 10V
- Operating Temperature :
- -40°C~150°C TJ
- Datasheets
- IXFC15N80Q
N-Channel Tube 650m Ω @ 500mA, 10V ±20V 4300pF @ 25V 90nC @ 10V 800V ISOPLUS220™
IXFC15N80Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFC15N80Q Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a 800V drain to source voltage (Vdss)
IXFC15N80Q Applications
There are a lot of IXYS
IXFC15N80Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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