IXFC15N80Q

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Mfr.Part #
IXFC15N80Q
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 13A ISOPLUS220
Stock
4,207
In Stock :
4,207

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
ISOPLUS220™
Drain to Source Breakdown Voltage :
800V
Avalanche Energy Rating (Eas) :
1000 mJ
Turn-Off Delay Time :
53 ns
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
650m Ω @ 500mA, 10V
Power Dissipation (Max) :
230W (Tc)
Power Dissipation-Max :
230W Tc
Case Connection :
Isolated
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Terminal Form :
THROUGH-HOLE
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 25V
Mounting Type :
Through Hole
Packaging :
Tube
Fall Time (Typ) :
16 ns
Number of Pins :
3
Transistor Element Material :
SILICON
Series :
HiPerFET™
Rise Time :
27ns
Number of Terminations :
3
Number of Terminals :
3
Drain-source On Resistance-Max :
0.65Ohm
Element Configuration :
Single
Pin Count :
3
Drain to Source Voltage (Vdss) :
800V
JESD-30 Code :
R-PSIP-T3
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Operating Temperature :
-40°C~150°C TJ
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Status :
Obsolete
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
13A Tc
DS Breakdown Voltage-Min :
800 V
Manufacturer :
IXYS Corporation
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
60A
Additional Feature :
AVALANCHE RATED
Power Dissipation :
230W
Continuous Drain Current (ID) :
13A
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
JESD-609 Code :
e1
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Published :
2003
RoHS Status :
RoHS Compliant
Base Product Number :
IXFC15N80
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Not Qualified
Supplier Device Package :
ISOPLUS220™
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Datasheets
IXFC15N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC15N80Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS220™, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-40°C~150°C TJ, IXFC15N80Q pinout, IXFC15N80Q datasheet PDF, IXFC15N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC15N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC15N80Q


N-Channel Tube 650m Ω @ 500mA, 10V ±20V 4300pF @ 25V 90nC @ 10V 800V ISOPLUS220™

IXFC15N80Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFC15N80Q Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a 800V drain to source voltage (Vdss)


IXFC15N80Q Applications


There are a lot of IXYS
IXFC15N80Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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