IXFC15N80Q

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Mfr.Part #
IXFC15N80Q
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 13A ISOPLUS220
Stock
4,207
In Stock :
4,207

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFC15N80
Series :
HiPerFET™
Turn-Off Delay Time :
53 ns
FET Type :
N-Channel
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
FET Feature :
--
DS Breakdown Voltage-Min :
800 V
Power Dissipation (Max) :
230W (Tc)
Fall Time (Typ) :
16 ns
Power Dissipation-Max :
230W Tc
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 25V
Element Configuration :
Single
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
1000 mJ
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Manufacturer :
IXYS Corporation
Operating Temperature :
-40°C~150°C TJ
Drain-source On Resistance-Max :
0.65Ohm
Rise Time :
27ns
Power Dissipation :
230W
Mounting Type :
Through Hole
Package :
Tube
Reach Compliance Code :
Compliant
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Published :
2003
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
AVALANCHE RATED
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
60A
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
650m Ω @ 500mA, 10V
Product Status :
Obsolete
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
800V
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
13A
Pbfree Code :
yes
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSIP-T3
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Number of Terminations :
3
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
800V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Supplier Device Package :
ISOPLUS220™
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Package / Case :
ISOPLUS220™
Case Connection :
Isolated
Datasheets
IXFC15N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC15N80Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:ISOPLUS220™, IXFC15N80Q pinout, IXFC15N80Q datasheet PDF, IXFC15N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC15N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC15N80Q


N-Channel Tube 650m Ω @ 500mA, 10V ±20V 4300pF @ 25V 90nC @ 10V 800V ISOPLUS220™

IXFC15N80Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFC15N80Q Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a 800V drain to source voltage (Vdss)


IXFC15N80Q Applications


There are a lot of IXYS
IXFC15N80Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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