IXFC15N80Q

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Mfr.Part #
IXFC15N80Q
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 13A ISOPLUS220
Stock
4,207
In Stock :
4,207

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
ISOPLUS220™
Number of Elements :
1
Element Configuration :
Single
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS Corporation
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Drain-source On Resistance-Max :
0.65Ohm
DS Breakdown Voltage-Min :
800 V
Case Connection :
Isolated
Turn-Off Delay Time :
53 ns
FET Type :
N-Channel
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Package / Case :
ISOPLUS220™
Rds On (Max) @ Id, Vgs :
650m Ω @ 500mA, 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
13A
Power Dissipation (Max) :
230W (Tc)
Mount :
Through Hole
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PSIP-T3
Number of Terminations :
3
Product Status :
Obsolete
Series :
HiPerFET™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Vgs (Max) :
±20V
Pin Count :
3
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Power Dissipation-Max :
230W Tc
Drain to Source Voltage (Vdss) :
800V
Number of Terminals :
3
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 25V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Pulsed Drain Current-Max (IDM) :
60A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
Drain to Source Breakdown Voltage :
800V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Base Product Number :
IXFC15N80
Operating Temperature :
-40°C~150°C TJ
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Published :
2003
Number of Pins :
3
Fall Time (Typ) :
16 ns
Power Dissipation :
230W
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Packaging :
Tube
Avalanche Energy Rating (Eas) :
1000 mJ
Rise Time :
27ns
Datasheets
IXFC15N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC15N80Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:ISOPLUS220™, Number of Terminations:3, Operating Temperature:-40°C~150°C TJ, Number of Pins:3, IXFC15N80Q pinout, IXFC15N80Q datasheet PDF, IXFC15N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC15N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC15N80Q


N-Channel Tube 650m Ω @ 500mA, 10V ±20V 4300pF @ 25V 90nC @ 10V 800V ISOPLUS220™

IXFC15N80Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFC15N80Q Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a 800V drain to source voltage (Vdss)


IXFC15N80Q Applications


There are a lot of IXYS
IXFC15N80Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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