IXFC15N80Q
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- Mfr.Part #
- IXFC15N80Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A ISOPLUS220
- Stock
- 4,207
- In Stock ：
- 4,207
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- ISOPLUS220™
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Series :
- HiPerFET™
- RoHS Status :
- RoHS Compliant
- Base Product Number :
- IXFC15N80
- Case Connection :
- Isolated
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 13A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSIP-T3
- Drain to Source Breakdown Voltage :
- 800V
- DS Breakdown Voltage-Min :
- 800 V
- Product Status :
- Obsolete
- Supplier Device Package :
- ISOPLUS220™
- Manufacturer :
- IXYS Corporation
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 500mA, 10V
- Published :
- 2003
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 53 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 25V
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Drain to Source Voltage (Vdss) :
- 800V
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 60A
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Rise Time :
- 27ns
- Package :
- Tube
- Power Dissipation-Max :
- 230W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 230W
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation (Max) :
- 230W (Tc)
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Mount :
- Through Hole
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 0.65Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 16 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- IXFC15N80Q
N-Channel Tube 650m Ω @ 500mA, 10V ±20V 4300pF @ 25V 90nC @ 10V 800V ISOPLUS220™
IXFC15N80Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFC15N80Q Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a 800V drain to source voltage (Vdss)
IXFC15N80Q Applications
There are a lot of IXYS
IXFC15N80Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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