IXFC24N50Q
- Mfr.Part #
- IXFC24N50Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 21A ISOPLUS220
- Stock
- 8,878
- In Stock :
- 8,878
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 21A
- Series :
- HiPerFET™
- Pulsed Drain Current-Max (IDM) :
- 84A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Qualification Status :
- Not Qualified
- Package / Case :
- ISOPLUS220™
- Power Dissipation-Max :
- 230W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 135nC @ 10V
- Pin Count :
- 3
- Base Product Number :
- IXFC24N50
- Case Connection :
- Isolated
- Manufacturer :
- IXYS Corporation
- Surface Mount :
- No
- Supplier Device Package :
- ISOPLUS220™
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Package :
- Bulk
- JESD-30 Code :
- R-PSIP-T3
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Obsolete
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 3
- Power Dissipation (Max) :
- 230W (Tc)
- Number of Elements :
- 1
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.23Ohm
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 500V
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 500V
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 10.5A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Terminal Finish :
- TIN SILVER COPPER
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Datasheets
- IXFC24N50Q
IXFC24N50Q Documents

N-Channel Tube 230m Ω @ 10.5A, 10V ±20V 4200pF @ 25V 135nC @ 10V 500V ISOPLUS220™
IXFC24N50Q Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 21A.There is a peak drain current of 84A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFC24N50Q Features
based on its rated peak drain current 84A.
a 500V drain to source voltage (Vdss)
IXFC24N50Q Applications
There are a lot of IXYS
IXFC24N50Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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