IXFC30N60P
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- Mfr.Part #
- IXFC30N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A ISOPLUS220
- Stock
- 29,986
- In Stock ：
- 29,986
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS Corporation
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 600V
- Supplier Device Package :
- ISOPLUS220™
- Product Status :
- Obsolete
- Pulsed Drain Current-Max (IDM) :
- 80A
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 75 ns
- Packaging :
- Tube
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.25Ohm
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFC30N60
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 166W (Tc)
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 15A, 10V
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- Package / Case :
- ISOPLUS220™
- Gate to Source Voltage (Vgs) :
- 30V
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- JESD-30 Code :
- R-PSIP-T3
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 3
- Pin Count :
- 3
- Package Shape :
- RECTANGULAR
- Published :
- 2006
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Voltage - Rated DC :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminals :
- 3
- DS Breakdown Voltage-Min :
- 600 V
- Rise Time :
- 20ns
- Power Dissipation :
- 166W
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- Isolated
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 15A
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Power Dissipation-Max :
- 166W Tc
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Series :
- HiPerFET™, PolarHT™
- Current Rating :
- 30A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 25 ns
- Terminal Form :
- THROUGH-HOLE
- Datasheets
- IXFC30N60P
N-Channel Tube 250m Ω @ 15A, 10V ±30V 3820pF @ 25V 85nC @ 10V 600V ISOPLUS220™
IXFC30N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3820pF @ 25V.This device conducts a continuous drain current (ID) of 15A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFC30N60P Applications
There are a lot of IXYS
IXFC30N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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