IXFC30N60P
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- Mfr.Part #
- IXFC30N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A ISOPLUS220
- Stock
- 29,986
- In Stock ：
- 29,986
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Obsolete
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 80A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Number of Elements :
- 1
- Power Dissipation :
- 166W
- Rise Time :
- 20ns
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- 600V
- Manufacturer :
- IXYS Corporation
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- Terminal Position :
- Single
- Package / Case :
- ISOPLUS220™
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Number of Terminations :
- 3
- Base Product Number :
- IXFC30N60
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 25 ns
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 15A, 10V
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- FET Feature :
- --
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- DS Breakdown Voltage-Min :
- 600 V
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation-Max :
- 166W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- HiPerFET™, PolarHT™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation (Max) :
- 166W (Tc)
- Current Rating :
- 30A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Continuous Drain Current (ID) :
- 15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 75 ns
- Drain-source On Resistance-Max :
- 0.25Ohm
- Qualification Status :
- Not Qualified
- Case Connection :
- Isolated
- Supplier Device Package :
- ISOPLUS220™
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2006
- Datasheets
- IXFC30N60P
N-Channel Tube 250m Ω @ 15A, 10V ±30V 3820pF @ 25V 85nC @ 10V 600V ISOPLUS220™
IXFC30N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3820pF @ 25V.This device conducts a continuous drain current (ID) of 15A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFC30N60P Applications
There are a lot of IXYS
IXFC30N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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