IXFC30N60P
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- Mfr.Part #
- IXFC30N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A ISOPLUS220
- Stock
- 29,986
- In Stock ：
- 29,986
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- ISOPLUS220™
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Power Dissipation :
- 166W
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Tube
- FET Feature :
- --
- Current Rating :
- 30A
- Element Configuration :
- Single
- Rise Time :
- 20ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Pulsed Drain Current-Max (IDM) :
- 80A
- Drain-source On Resistance-Max :
- 0.25Ohm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 166W Tc
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Power Dissipation (Max) :
- 166W (Tc)
- Turn-Off Delay Time :
- 75 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 600V
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSIP-T3
- Continuous Drain Current (ID) :
- 15A
- DS Breakdown Voltage-Min :
- 600 V
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 15A, 10V
- JESD-609 Code :
- e1
- Package :
- Tube
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Fall Time (Typ) :
- 25 ns
- Series :
- HiPerFET™, PolarHT™
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- ISOPLUS220™
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS Corporation
- Package Shape :
- RECTANGULAR
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2006
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXFC30N60
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Mount :
- Through Hole
- Datasheets
- IXFC30N60P
IXFC30N60P Documents
N-Channel Tube 250m Ω @ 15A, 10V ±30V 3820pF @ 25V 85nC @ 10V 600V ISOPLUS220™
IXFC30N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3820pF @ 25V.This device conducts a continuous drain current (ID) of 15A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFC30N60P Applications
There are a lot of IXYS
IXFC30N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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