IXFC16N50P
- Mfr.Part #
- IXFC16N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 10A ISOPLUS220
- Stock
- 24,376
- In Stock :
- 24,376
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- JESD-30 Code :
- R-PSIP-T3
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 22 ns
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Manufacturer :
- IXYS Corporation
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain-source On Resistance-Max :
- 0.45Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 10 A
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Power Dissipation-Max (Abs) :
- 125 W
- Lead Free :
- Lead Free
- Package / Case :
- ISOPLUS220™
- Published :
- 2006
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 750 mJ
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Power Dissipation-Max :
- 125W Tc
- Voltage - Rated DC :
- 500V
- Power Dissipation (Max) :
- 125W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Base Product Number :
- IXFC16N50
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Series :
- HiPerFET™, PolarHT™
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 8A, 10V
- Power Dissipation :
- 125W
- Current Rating :
- 16A
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Drain to Source Voltage (Vdss) :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Obsolete
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 10A
- Number of Elements :
- 1
- Rise Time :
- 25ns
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Supplier Device Package :
- ISOPLUS220™
- Case Connection :
- Isolated
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Turn-Off Delay Time :
- 70 ns
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXFC16N50P
N-Channel Tube 450m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V ISOPLUS220™
IXFC16N50P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 35 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFC16N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)
IXFC16N50P Applications
There are a lot of IXYS
IXFC16N50P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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