IXFC16N50P

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Mfr.Part #
IXFC16N50P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 500V 10A ISOPLUS220
Stock
24,376
In Stock :
24,376

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
125W Tc
Mount :
Through Hole
Product Status :
Obsolete
Number of Terminals :
3
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Drain to Source Breakdown Voltage :
500V
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSIP-T3
Number of Terminations :
3
FET Feature :
--
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
10 A
Transistor Application :
SWITCHING
Fall Time (Typ) :
22 ns
Terminal Position :
Single
Number of Elements :
1
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Pin Count :
3
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
500 V
Published :
2006
Case Connection :
Isolated
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
750 mJ
Drain-source On Resistance-Max :
0.45Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
450m Ω @ 8A, 10V
Manufacturer :
IXYS Corporation
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
Rise Time :
25ns
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
10A
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation (Max) :
125W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
ISOPLUS220™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Tube
Supplier Device Package :
ISOPLUS220™
Series :
HiPerFET™, PolarHT™
Pbfree Code :
yes
Number of Pins :
3
Drain to Source Voltage (Vdss) :
500V
Packaging :
Tube
Voltage - Rated DC :
500V
Power Dissipation :
125W
Turn-Off Delay Time :
70 ns
Mounting Type :
Through Hole
Base Product Number :
IXFC16N50
Current Rating :
16A
Pulsed Drain Current-Max (IDM) :
35 A
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
125 W
Operating Temperature :
-55°C~150°C TJ
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC16N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:ISOPLUS220™, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFC16N50P pinout, IXFC16N50P datasheet PDF, IXFC16N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC16N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC16N50P


N-Channel Tube 450m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V ISOPLUS220™

IXFC16N50P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 35 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFC16N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)


IXFC16N50P Applications


There are a lot of IXYS
IXFC16N50P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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