IXFC16N50P
- Mfr.Part #
- IXFC16N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 10A ISOPLUS220
- Stock
- 24,376
- In Stock :
- 24,376
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Supplier Device Package :
- ISOPLUS220™
- Power Dissipation (Max) :
- 125W (Tc)
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 10A
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Drain-source On Resistance-Max :
- 0.45Ohm
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Number of Elements :
- 1
- Surface Mount :
- No
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 125 W
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- FET Feature :
- --
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 500 V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Series :
- HiPerFET™, PolarHT™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Package / Case :
- ISOPLUS220™
- Base Product Number :
- IXFC16N50
- Product Status :
- Obsolete
- Voltage - Rated DC :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 125W Tc
- Rise Time :
- 25ns
- Published :
- 2006
- Drain Current-Max (Abs) (ID) :
- 10 A
- Pbfree Code :
- yes
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Current Rating :
- 16A
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 8A, 10V
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 22 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 500V
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 70 ns
- Power Dissipation :
- 125W
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Datasheets
- IXFC16N50P
N-Channel Tube 450m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V ISOPLUS220™
IXFC16N50P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 35 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFC16N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)
IXFC16N50P Applications
There are a lot of IXYS
IXFC16N50P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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