IXFC16N50P

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Mfr.Part #
IXFC16N50P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 500V 10A ISOPLUS220
Stock
24,376
In Stock :
24,376

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
ISOPLUS220™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±30V
Number of Terminals :
3
Base Product Number :
IXFC16N50
Continuous Drain Current (ID) :
10A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
125W
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Number of Terminations :
3
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
10 A
Fall Time (Typ) :
22 ns
Turn-Off Delay Time :
70 ns
Power Dissipation-Max (Abs) :
125 W
Drain to Source Voltage (Vdss) :
500V
Series :
HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs :
450m Ω @ 8A, 10V
Avalanche Energy Rating (Eas) :
750 mJ
Pulsed Drain Current-Max (IDM) :
35 A
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Voltage - Rated DC :
500V
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.45Ohm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rise Time :
25ns
Packaging :
Tube
Transistor Element Material :
SILICON
Supplier Device Package :
ISOPLUS220™
Package :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
500 V
Mount :
Through Hole
Published :
2006
Terminal Form :
THROUGH-HOLE
Manufacturer :
IXYS Corporation
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Terminal Position :
Single
Mounting Type :
Through Hole
Power Dissipation (Max) :
125W (Tc)
Lead Free :
Lead Free
Case Connection :
Isolated
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Element Configuration :
Single
Current Rating :
16A
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
125W Tc
Drain to Source Breakdown Voltage :
500V
Number of Pins :
3
FET Type :
N-Channel
JESD-30 Code :
R-PSIP-T3
Product Status :
Obsolete
Surface Mount :
No
FET Feature :
--
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Datasheets
IXFC16N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC16N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS220™, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IXFC16N50P pinout, IXFC16N50P datasheet PDF, IXFC16N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC16N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC16N50P


N-Channel Tube 450m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V ISOPLUS220™

IXFC16N50P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 35 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFC16N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)


IXFC16N50P Applications


There are a lot of IXYS
IXFC16N50P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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