IXFC16N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

70 ns

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Published :

2006

Pbfree Code :

yes

Supplier Device Package :

ISOPLUS220™

Transistor Element Material :

SILICON

Number of Elements :

1

Surface Mount :

No

Voltage - Rated DC :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Vgs (Max) :

±30V

Number of Pins :

3

Manufacturer :

IXYS Corporation

Current Rating :

16A

Pulsed Drain Current-Max (IDM) :

35 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Product Status :

Obsolete

FET Feature :

--

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Series :

HiPerFET™, PolarHT™

Number of Terminations :

3

Base Product Number :

IXFC16N50

Terminal Form :

THROUGH-HOLE

Lead Free :

Lead Free

Terminal Position :

Single

Drain to Source Breakdown Voltage :

500V

Fall Time (Typ) :

22 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

10 A

Case Connection :

Isolated

Packaging :

Tube

Power Dissipation-Max :

125W Tc

Number of Terminals :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

125 W

Drain-source On Resistance-Max :

0.45Ohm

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

500 V

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

25ns

Gate to Source Voltage (Vgs) :

30V

Power Dissipation (Max) :

125W (Tc)

Power Dissipation :

125W

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Continuous Drain Current (ID) :

10A

RoHS Status :

RoHS Compliant

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

750 mJ

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Rds On (Max) @ Id, Vgs :

450m Ω @ 8A, 10V

Package / Case :

ISOPLUS220™

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

500V

Reach Compliance Code :

Compliant