IXFC24N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™

Base Product Number :

IXFC24N50

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

Drain to Source Breakdown Voltage :

500V

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Terminations :

3

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.23 Ω

Pulsed Drain Current-Max (IDM) :

84A

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

230m Ω @ 12A, 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

21A

Number of Elements :

1

Power Dissipation-Max :

230W Tc

JESD-609 Code :

e1

JESD-30 Code :

R-PSIP-T3

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 4mA

Surface Mount :

No

Power Dissipation :

230W

Terminal Position :

Single

Turn-Off Delay Time :

65 ns

Pbfree Code :

yes

Supplier Device Package :

ISOPLUS220™

Fall Time (Typ) :

30 ns

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Package / Case :

ISOPLUS220™

Vgs (Max) :

±20V

Published :

2003

Number of Terminals :

3

FET Feature :

--

Product Status :

Obsolete

DS Breakdown Voltage-Min :

500 V

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS Corporation

Rise Time :

33ns

Power Dissipation (Max) :

230W (Tc)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Mount :

Through Hole

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR