IXFC14N80P

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Mfr.Part #
IXFC14N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 8A ISOPLUS220
Stock
10,130
In Stock :
10,130

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
800V
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Package / Case :
ISOPLUS220™
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Case Connection :
Isolated
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
Number of Pins :
220
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSIP-T3
Terminal Position :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
FET Feature :
--
Power Dissipation-Max :
130W Tc
Element Configuration :
Single
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
Published :
2006
Turn-Off Delay Time :
75 ns
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
770m Ω @ 7A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
8A
Pulsed Drain Current-Max (IDM) :
40A
Number of Terminals :
3
Manufacturer :
IXYS Corporation
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
JESD-609 Code :
e1
Series :
HiPerFET™, PolarHT™
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Drain-source On Resistance-Max :
0.77Ohm
Number of Terminations :
3
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
8A
Product Status :
Obsolete
DS Breakdown Voltage-Min :
800 V
Supplier Device Package :
ISOPLUS220™
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Pin Count :
3
Power Dissipation (Max) :
130W (Tc)
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
1200 mJ
Drain to Source Breakdown Voltage :
800V
Base Product Number :
IXFC14N80
Power Dissipation :
130W
Package Shape :
RECTANGULAR
Datasheets
IXFC14N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC14N80P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS220™, Operating Temperature:-55°C~150°C TJ, Number of Pins:220, Number of Terminations:3, Mounting Type:Through Hole, IXFC14N80P pinout, IXFC14N80P datasheet PDF, IXFC14N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC14N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC14N80P


N-Channel Tube 770m Ω @ 7A, 10V ±30V 3900pF @ 25V 61nC @ 10V 800V ISOPLUS220™

IXFC14N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.The maximum input capacitance of this device is 3900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFC14N80P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 40A.
a 800V drain to source voltage (Vdss)


IXFC14N80P Applications


There are a lot of IXYS
IXFC14N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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