IXFC14N80P

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Mfr.Part #
IXFC14N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 8A ISOPLUS220
Stock
10,130
In Stock :
10,130

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
130W Tc
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
800V
DS Breakdown Voltage-Min :
800 V
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™, PolarHT™
Qualification Status :
Not Qualified
Element Configuration :
Single
Package :
Tube
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Continuous Drain Current (ID) :
8A
Power Dissipation :
130W
Turn-Off Delay Time :
75 ns
Number of Elements :
1
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.77Ohm
Avalanche Energy Rating (Eas) :
1200 mJ
Package Shape :
RECTANGULAR
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
770m Ω @ 7A, 10V
JESD-30 Code :
R-PSIP-T3
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
40A
Current - Continuous Drain (Id) @ 25°C :
8A Tc
FET Feature :
--
Published :
2006
Transistor Application :
SWITCHING
Power Dissipation (Max) :
130W (Tc)
Manufacturer :
IXYS Corporation
Terminal Form :
THROUGH-HOLE
Product Status :
Obsolete
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
3
Pin Count :
3
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±30V
Terminal Position :
Single
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Additional Feature :
AVALANCHE RATED
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 10V
Drain to Source Breakdown Voltage :
800V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
Isolated
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
Drain Current-Max (Abs) (ID) :
8A
Supplier Device Package :
ISOPLUS220™
Surface Mount :
No
Package / Case :
ISOPLUS220™
Base Product Number :
IXFC14N80
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Pins :
220
JESD-609 Code :
e1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Datasheets
IXFC14N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC14N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:ISOPLUS220™, Number of Pins:220, IXFC14N80P pinout, IXFC14N80P datasheet PDF, IXFC14N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC14N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC14N80P


N-Channel Tube 770m Ω @ 7A, 10V ±30V 3900pF @ 25V 61nC @ 10V 800V ISOPLUS220™

IXFC14N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.The maximum input capacitance of this device is 3900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFC14N80P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 40A.
a 800V drain to source voltage (Vdss)


IXFC14N80P Applications


There are a lot of IXYS
IXFC14N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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