IXFC14N80P

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Mfr.Part #
IXFC14N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 8A ISOPLUS220
Stock
10,130
In Stock :
10,130

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSIP-T3
Avalanche Energy Rating (Eas) :
1200 mJ
Series :
HiPerFET™, PolarHT™
Number of Terminals :
3
Published :
2006
FET Feature :
--
Base Product Number :
IXFC14N80
Drain-source On Resistance-Max :
0.77Ohm
Vgs (Max) :
±30V
Mount :
Through Hole
Case Connection :
Isolated
Package / Case :
ISOPLUS220™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
5.5V @ 4mA
DS Breakdown Voltage-Min :
800 V
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Reach Compliance Code :
Compliant
Packaging :
Tube
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
770m Ω @ 7A, 10V
Manufacturer :
IXYS Corporation
Pulsed Drain Current-Max (IDM) :
40A
Product Status :
Obsolete
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Continuous Drain Current (ID) :
8A
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 10V
Transistor Element Material :
SILICON
Element Configuration :
Single
Drain to Source Breakdown Voltage :
800V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Mounting Type :
Through Hole
Number of Pins :
220
RoHS Status :
RoHS Compliant
Drain Current-Max (Abs) (ID) :
8A
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e1
Pbfree Code :
yes
Power Dissipation-Max :
130W Tc
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
130W
Supplier Device Package :
ISOPLUS220™
Turn-Off Delay Time :
75 ns
Drain to Source Voltage (Vdss) :
800V
Power Dissipation (Max) :
130W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXFC14N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC14N80P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS220™, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:220, Number of Terminations:3, IXFC14N80P pinout, IXFC14N80P datasheet PDF, IXFC14N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC14N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC14N80P


N-Channel Tube 770m Ω @ 7A, 10V ±30V 3900pF @ 25V 61nC @ 10V 800V ISOPLUS220™

IXFC14N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.The maximum input capacitance of this device is 3900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFC14N80P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 40A.
a 800V drain to source voltage (Vdss)


IXFC14N80P Applications


There are a lot of IXYS
IXFC14N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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