IXFC14N80P
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- Mfr.Part #
- IXFC14N80P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 8A ISOPLUS220
- Stock
- 10,130
- In Stock ：
- 10,130
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 130W
- Package / Case :
- ISOPLUS220™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 8A
- Base Product Number :
- IXFC14N80
- Published :
- 2006
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Surface Mount :
- No
- Product Status :
- Obsolete
- Pulsed Drain Current-Max (IDM) :
- 40A
- Power Dissipation-Max :
- 130W Tc
- Drain to Source Voltage (Vdss) :
- 800V
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.77Ohm
- Terminal Form :
- THROUGH-HOLE
- Number of Pins :
- 220
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Turn-Off Delay Time :
- 75 ns
- Drain to Source Breakdown Voltage :
- 800V
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Number of Terminals :
- 3
- Series :
- HiPerFET™, PolarHT™
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 130W (Tc)
- Pin Count :
- 3
- Packaging :
- Tube
- Manufacturer :
- IXYS Corporation
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSIP-T3
- Rds On (Max) @ Id, Vgs :
- 770m Ω @ 7A, 10V
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 8A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- DS Breakdown Voltage-Min :
- 800 V
- Supplier Device Package :
- ISOPLUS220™
- Number of Elements :
- 1
- Datasheets
- IXFC14N80P
N-Channel Tube 770m Ω @ 7A, 10V ±30V 3900pF @ 25V 61nC @ 10V 800V ISOPLUS220™
IXFC14N80P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.The maximum input capacitance of this device is 3900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFC14N80P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 40A.
a 800V drain to source voltage (Vdss)
IXFC14N80P Applications
There are a lot of IXYS
IXFC14N80P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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