IXFC26N50P

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Mfr.Part #
IXFC26N50P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 500V 15A ISOPLUS220
Stock
21,211
In Stock :
21,211

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
500V
Rds On (Max) @ Id, Vgs :
260m Ω @ 13A, 10V
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSIP-T3
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Package / Case :
ISOPLUS220™
Supplier Device Package :
ISOPLUS220™
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Product Status :
Obsolete
Rise Time :
25ns
Operating Temperature :
-55°C~150°C TJ
Case Connection :
Isolated
Pin Count :
3
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Number of Terminals :
3
Series :
HiPerFET™, PolarHT™
Power Dissipation :
130W
Pulsed Drain Current-Max (IDM) :
78A
Turn-Off Delay Time :
58 ns
Qualification Status :
Not Qualified
Lead Free :
Lead Free
Number of Terminations :
3
Current Rating :
26A
Pbfree Code :
yes
Manufacturer :
IXYS Corporation
Continuous Drain Current (ID) :
15A
DS Breakdown Voltage-Min :
500 V
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
1000 mJ
Package :
Tube
Terminal Form :
THROUGH-HOLE
FET Type :
N-Channel
Fall Time (Typ) :
20 ns
RoHS Status :
RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Number of Elements :
1
Number of Pins :
3
Reach Compliance Code :
Compliant
Published :
2006
Drain to Source Breakdown Voltage :
500V
Power Dissipation (Max) :
130W (Tc)
Vgs (Max) :
±30V
Power Dissipation-Max :
130W Tc
Element Configuration :
Single
JESD-609 Code :
e1
Surface Mount :
No
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
IXFC26N50
Drain-source On Resistance-Max :
0.26Ohm
Voltage - Rated DC :
500V
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXFC26N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC26N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS220™, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, IXFC26N50P pinout, IXFC26N50P datasheet PDF, IXFC26N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC26N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC26N50P


N-Channel Tube 260m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V ISOPLUS220™

IXFC26N50P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 58 ns.Peak drain current is 78A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFC26N50P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)


IXFC26N50P Applications


There are a lot of IXYS
IXFC26N50P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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