IXFC16N80P
- Mfr.Part #
- IXFC16N80P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 9A ISOPLUS220
- Stock
- 26,039
- In Stock :
- 26,039
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Base Product Number :
- IXFC16N80
- Number of Elements :
- 1
- Rise Time :
- 32ns
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Max Operating Temperature :
- 150 °C
- Power Dissipation :
- 150W
- Fall Time (Typ) :
- 29 ns
- JESD-609 Code :
- e1
- Continuous Drain Current (ID) :
- 9A
- RoHS Status :
- RoHS Compliant
- Published :
- 2006
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance :
- 4.6 nF
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- Reach Compliance Code :
- Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rds On Max :
- 650 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- ISOPLUS220™
- RoHS :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 8A, 10V
- Package / Case :
- ISOPLUS220™
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Max Power Dissipation :
- 150 W
- Pulsed Drain Current-Max (IDM) :
- 48A
- Surface Mount :
- No
- Drain to Source Resistance :
- 650 mΩ
- Mount :
- Through Hole
- Product Status :
- Obsolete
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.65Ohm
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Drain Current-Max (Abs) (ID) :
- 9A
- Power Dissipation-Max :
- 150W Tc
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 75 ns
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation (Max) :
- 150W (Tc)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Number of Terminals :
- 3
- Package :
- Tube
- Terminal Position :
- Single
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 800 V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Case Connection :
- Isolated
- DS Breakdown Voltage-Min :
- 800 V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Series :
- HiPerFET™, PolarHT™
- Manufacturer :
- IXYS Corporation
- Min Operating Temperature :
- -55 °C
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 800V
- Datasheets
- IXFC16N80P

N-Channel Tube 650m Ω @ 8A, 10V ±30V 4600pF @ 25V 71nC @ 10V 800 V ISOPLUS220™
IXFC16N80P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 9A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 48A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 650 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800 V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFC16N80P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 650 mΩ
a 800 V drain to source voltage (Vdss)
IXFC16N80P Applications
There are a lot of IXYS
IXFC16N80P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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