IXFC110N10P
- Mfr.Part #
- IXFC110N10P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A ISOPLUS220
- Stock
- 25,372
- In Stock :
- 25,372
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS Corporation
- Supplier Device Package :
- ISOPLUS220™
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 65 ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 120W Tc
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 25 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- FET Type :
- N-Channel
- Surface Mount :
- No
- Published :
- 2006
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 55A, 10V
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 250A
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Obsolete
- Package :
- Box
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Isolation Voltage :
- 2.5kV
- Threshold Voltage :
- 5V
- REACH SVHC :
- No SVHC
- Package / Case :
- ISOPLUS220™
- Drain-source On Resistance-Max :
- 0.017Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 25ns
- Number of Terminals :
- 3
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- JESD-30 Code :
- R-PSIP-T3
- Drain to Source Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Series :
- HiPerFET™, PolarHT™
- Drain to Source Voltage (Vdss) :
- 100V
- DS Breakdown Voltage-Min :
- 100 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 120W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 120W
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- FET Feature :
- --
- Base Product Number :
- IXFC110N10
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 25V
- Continuous Drain Current (ID) :
- 60A
- JESD-609 Code :
- e1
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- Isolated
- Number of Pins :
- 220
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Datasheets
- IXFC110N10P

N-Channel Tube 17m Ω @ 55A, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V ISOPLUS220™
IXFC110N10P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 250A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFC110N10P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFC110N10P Applications
There are a lot of IXYS
IXFC110N10P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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