IXFC110N10P

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Mfr.Part #
IXFC110N10P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 100V 60A ISOPLUS220
Stock
25,372
In Stock :
25,372

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS Corporation
Supplier Device Package :
ISOPLUS220™
Number of Elements :
1
Turn-Off Delay Time :
65 ns
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
120W Tc
ECCN Code :
EAR99
Fall Time (Typ) :
25 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
FET Type :
N-Channel
Surface Mount :
No
Published :
2006
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
17m Ω @ 55A, 10V
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
250A
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Product Status :
Obsolete
Package :
Box
Mount :
Through Hole
Pbfree Code :
yes
Mounting Type :
Through Hole
Isolation Voltage :
2.5kV
Threshold Voltage :
5V
REACH SVHC :
No SVHC
Package / Case :
ISOPLUS220™
Drain-source On Resistance-Max :
0.017Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
Rise Time :
25ns
Number of Terminals :
3
RoHS Status :
RoHS Compliant
Terminal Position :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs(th) (Max) @ Id :
5V @ 4mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSIP-T3
Drain to Source Breakdown Voltage :
100V
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™, PolarHT™
Drain to Source Voltage (Vdss) :
100V
DS Breakdown Voltage-Min :
100 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
120W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
120W
Element Configuration :
Single
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
FET Feature :
--
Base Product Number :
IXFC110N10
Avalanche Energy Rating (Eas) :
1000 mJ
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Continuous Drain Current (ID) :
60A
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~175°C TJ
Case Connection :
Isolated
Number of Pins :
220
Packaging :
Tube
Transistor Element Material :
SILICON
Datasheets
IXFC110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC110N10P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:ISOPLUS220™, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Number of Pins:220, IXFC110N10P pinout, IXFC110N10P datasheet PDF, IXFC110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC110N10P


N-Channel Tube 17m Ω @ 55A, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V ISOPLUS220™

IXFC110N10P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 250A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFC110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFC110N10P Applications


There are a lot of IXYS
IXFC110N10P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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