IXFC22N60P
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- Mfr.Part #
- IXFC22N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 12A ISOPLUS220
- Stock
- 25,153
- In Stock ：
- 25,153
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- ISOPLUS220™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- --
- Base Product Number :
- IXFC22N60
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Power Dissipation :
- 130W
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 11A, 10V
- Package :
- Tube
- Terminal Position :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rise Time :
- 20ns
- JESD-609 Code :
- e1
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.36 Ω
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 12A
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Voltage - Rated DC :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 60 ns
- Case Connection :
- Isolated
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Supplier Device Package :
- ISOPLUS220™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2006
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS Corporation
- Series :
- HiPerFET™, PolarHT™
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 130W (Tc)
- DS Breakdown Voltage-Min :
- 600 V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Obsolete
- Element Configuration :
- Single
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 66A
- Power Dissipation-Max :
- 130W Tc
- Fall Time (Typ) :
- 23 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Current Rating :
- 22A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Datasheets
- IXFC22N60P
IXFC22N60P Documents
N-Channel Tube 360m Ω @ 11A, 10V ±30V 4000pF @ 25V 58nC @ 10V 600V ISOPLUS220™
IXFC22N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 4000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 66A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFC22N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXFC22N60P Applications
There are a lot of IXYS
IXFC22N60P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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