IXFC20N80P

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Mfr.Part #
IXFC20N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 11A ISOPLUS220
Stock
9,008
In Stock :
9,008

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Number of Elements :
1
Turn-Off Delay Time :
70 ns
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
AVALANCHE RATED
Transistor Application :
SWITCHING
Manufacturer :
IXYS Corporation
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
166W Tc
Mount :
Through Hole
Fall Time (Typ) :
25 ns
Series :
HiPerFET™, PolarHT™
Transistor Element Material :
SILICON
Case Connection :
Isolated
Power Dissipation (Max) :
166W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e1
Rise Time :
24ns
Input Capacitance (Ciss) (Max) @ Vds :
4680pF @ 25V
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
500m Ω @ 10A, 10V
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
800V
Surface Mount :
No
Avalanche Energy Rating (Eas) :
1000 mJ
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
Drain-source On Resistance-Max :
0.5Ohm
RoHS Status :
RoHS Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Pins :
3
JESD-30 Code :
R-PSIP-T3
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Product Status :
Obsolete
Drain to Source Breakdown Voltage :
800V
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Continuous Drain Current (ID) :
11A
Vgs(th) (Max) @ Id :
5V @ 4mA
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Base Product Number :
IXFC20N80
FET Feature :
--
Packaging :
Tube
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
800 V
Supplier Device Package :
ISOPLUS220™
Power Dissipation :
166W
Package / Case :
ISOPLUS220™
Published :
2006
Terminal Form :
THROUGH-HOLE
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Datasheets
IXFC20N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC20N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:ISOPLUS220™, IXFC20N80P pinout, IXFC20N80P datasheet PDF, IXFC20N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC20N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC20N80P


N-Channel Tube 500m Ω @ 10A, 10V ±30V 4680pF @ 25V 85nC @ 10V 800V ISOPLUS220™

IXFC20N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 4680pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFC20N80P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
a 800V drain to source voltage (Vdss)


IXFC20N80P Applications


There are a lot of IXYS
IXFC20N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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