IXFC20N80P

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Mfr.Part #
IXFC20N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 11A ISOPLUS220
Stock
9,008
In Stock :
9,008

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
25 ns
Avalanche Energy Rating (Eas) :
1000 mJ
Package :
Tube
Element Configuration :
Single
Published :
2006
Power Dissipation (Max) :
166W (Tc)
Vgs (Max) :
±30V
Number of Terminations :
3
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Drain to Source Breakdown Voltage :
800V
Rds On (Max) @ Id, Vgs :
500m Ω @ 10A, 10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Pbfree Code :
yes
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Surface Mount :
No
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
800V
Pin Count :
3
JESD-30 Code :
R-PSIP-T3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
166W
FET Feature :
--
RoHS Status :
RoHS Compliant
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Case Connection :
Isolated
Turn-Off Delay Time :
70 ns
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Input Capacitance (Ciss) (Max) @ Vds :
4680pF @ 25V
Series :
HiPerFET™, PolarHT™
Package / Case :
ISOPLUS220™
Base Product Number :
IXFC20N80
Manufacturer :
IXYS Corporation
Rise Time :
24ns
Drain-source On Resistance-Max :
0.5Ohm
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
11A
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
30V
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
800 V
Supplier Device Package :
ISOPLUS220™
Mounting Type :
Through Hole
Product Status :
Obsolete
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
166W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
IXFC20N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC20N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:ISOPLUS220™, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFC20N80P pinout, IXFC20N80P datasheet PDF, IXFC20N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC20N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC20N80P


N-Channel Tube 500m Ω @ 10A, 10V ±30V 4680pF @ 25V 85nC @ 10V 800V ISOPLUS220™

IXFC20N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 4680pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFC20N80P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
a 800V drain to source voltage (Vdss)


IXFC20N80P Applications


There are a lot of IXYS
IXFC20N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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