IXFC12N80P
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- Mfr.Part #
- IXFC12N80P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 7A ISOPLUS220
- Stock
- 7,845
- In Stock ：
- 7,845
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 120W Tc
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Obsolete
- Continuous Drain Current (ID) :
- 7A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 62 ns
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Drain to Source Breakdown Voltage :
- 800V
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Rise Time :
- 22ns
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 36 A
- Drain to Source Voltage (Vdss) :
- 800V
- Gate to Source Voltage (Vgs) :
- 30V
- Drain-source On Resistance-Max :
- 0.00093 Ω
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain Current-Max (Abs) (ID) :
- 7A
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Base Product Number :
- IXFC12N80
- Rds On (Max) @ Id, Vgs :
- 930m Ω @ 6A, 10V
- Pin Count :
- 3
- Power Dissipation (Max) :
- 120W (Tc)
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 800 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- Series :
- HiPerFET™, PolarHT™
- Package / Case :
- ISOPLUS220™
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Supplier Device Package :
- ISOPLUS220™
- Fall Time (Typ) :
- 22 ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 120W
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- Datasheets
- IXFC12N80P
N-Channel Tube 930m Ω @ 6A, 10V ±30V 2800pF @ 25V 51nC @ 10V 800V ISOPLUS220™
IXFC12N80P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2800pF @ 25V.This device conducts a continuous drain current (ID) of 7A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 7A.When the device is turned off, a turn-off delay time of 62 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 36 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC12N80P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 36 A.
a 800V drain to source voltage (Vdss)
IXFC12N80P Applications
There are a lot of IXYS
IXFC12N80P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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