IXFC12N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Drain-source On Resistance-Max :

0.00093 Ω

Continuous Drain Current (ID) :

7A

Element Configuration :

Single

Published :

2006

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Avalanche Energy Rating (Eas) :

1000 mJ

Series :

HiPerFET™, PolarHT™

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Package :

Tube

Pbfree Code :

yes

Pin Count :

3

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Case Connection :

Isolated

Vgs (Max) :

±30V

Turn-Off Delay Time :

62 ns

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Power Dissipation :

120W

Fall Time (Typ) :

22 ns

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Supplier Device Package :

ISOPLUS220™

Base Product Number :

IXFC12N80

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

120W Tc

Drain to Source Voltage (Vdss) :

800V

Power Dissipation (Max) :

120W (Tc)

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

JESD-609 Code :

e1

Product Status :

Obsolete

Manufacturer :

IXYS Corporation

DS Breakdown Voltage-Min :

800 V

Mount :

Through Hole

Number of Terminals :

3

Number of Elements :

1

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

930m Ω @ 6A, 10V

Rise Time :

22ns

Package / Case :

ISOPLUS220™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

36 A

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Drain Current-Max (Abs) (ID) :

7A

FET Type :

N-Channel