IXFC12N80P

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Mfr.Part #
IXFC12N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 800V 7A ISOPLUS220
Stock
7,845
In Stock :
7,845

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Series :
HiPerFET™, PolarHT™
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Continuous Drain Current (ID) :
7A
Vgs (Max) :
±30V
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
62 ns
Number of Terminals :
3
Package Shape :
RECTANGULAR
Product Status :
Obsolete
Number of Terminations :
3
Transistor Element Material :
SILICON
Surface Mount :
No
Power Dissipation :
120W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Rise Time :
22ns
Base Product Number :
IXFC12N80
Fall Time (Typ) :
22 ns
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
Isolated
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
RoHS Compliant
Published :
2006
Drain to Source Voltage (Vdss) :
800V
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
30V
Manufacturer :
IXYS Corporation
Number of Pins :
3
Mount :
Through Hole
Number of Elements :
1
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Power Dissipation (Max) :
120W (Tc)
Pbfree Code :
yes
Terminal Position :
Single
Drain to Source Breakdown Voltage :
800V
Element Configuration :
Single
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
930m Ω @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Supplier Device Package :
ISOPLUS220™
Package :
Tube
Terminal Form :
THROUGH-HOLE
FET Feature :
--
Avalanche Energy Rating (Eas) :
1000 mJ
Package / Case :
ISOPLUS220™
Drain Current-Max (Abs) (ID) :
7A
DS Breakdown Voltage-Min :
800 V
Pin Count :
3
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.00093 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
120W Tc
Pulsed Drain Current-Max (IDM) :
36 A
Datasheets
IXFC12N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC12N80P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Package / Case:ISOPLUS220™, IXFC12N80P pinout, IXFC12N80P datasheet PDF, IXFC12N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC12N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC12N80P


N-Channel Tube 930m Ω @ 6A, 10V ±30V 2800pF @ 25V 51nC @ 10V 800V ISOPLUS220™

IXFC12N80P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2800pF @ 25V.This device conducts a continuous drain current (ID) of 7A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 7A.When the device is turned off, a turn-off delay time of 62 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 36 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFC12N80P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 36 A.
a 800V drain to source voltage (Vdss)


IXFC12N80P Applications


There are a lot of IXYS
IXFC12N80P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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