IXFC14N60P
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- Mfr.Part #
- IXFC14N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 8A ISOPLUS220
- Stock
- 28,384
- In Stock ：
- 28,384
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- JESD-30 Code :
- R-PSIP-T3
- FET Feature :
- --
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 70 ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 8A
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.63 Ω
- Rise Time :
- 27ns
- Base Product Number :
- IXFC14N60
- Current Rating :
- 14A
- Series :
- HiPerFET™, PolarHT™
- Continuous Drain Current (ID) :
- 8A
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Terminal Form :
- THROUGH-HOLE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS Corporation
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Rds On (Max) @ Id, Vgs :
- 630m Ω @ 7A, 10V
- Power Dissipation-Max (Abs) :
- 125 W
- Surface Mount :
- No
- Package / Case :
- ISOPLUS220™
- Power Dissipation-Max :
- 125W Tc
- Product Status :
- Obsolete
- JESD-609 Code :
- e1
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Supplier Device Package :
- ISOPLUS220™
- Pulsed Drain Current-Max (IDM) :
- 42A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Reach Compliance Code :
- Compliant
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Fall Time (Typ) :
- 26 ns
- Terminal Position :
- Single
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 100W
- Package :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 125W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 600 V
- RoHS Status :
- RoHS Compliant
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Datasheets
- IXFC14N60P
IXFC14N60P Documents
N-Channel Tube 630m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V ISOPLUS220™
IXFC14N60P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 42A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFC14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXFC14N60P Applications
There are a lot of IXYS
IXFC14N60P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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