IXFC14N60P
- Mfr.Part #
- IXFC14N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 8A ISOPLUS220
- Stock
- 28,384
- In Stock :
- 28,384
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarHT™
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600V
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFC14N60
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Pulsed Drain Current-Max (IDM) :
- 42A
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Number of Terminals :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 900 mJ
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Voltage - Rated DC :
- 600V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation :
- 100W
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Drain-source On Resistance-Max :
- 0.63 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Published :
- 2006
- Rise Time :
- 27ns
- Rds On (Max) @ Id, Vgs :
- 630m Ω @ 7A, 10V
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Pin Count :
- 3
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 600 V
- Power Dissipation (Max) :
- 125W (Tc)
- Fall Time (Typ) :
- 26 ns
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 125W Tc
- Turn-Off Delay Time :
- 70 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Drain Current-Max (Abs) (ID) :
- 8A
- JESD-30 Code :
- R-PSIP-T3
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max (Abs) :
- 125 W
- Surface Mount :
- No
- Package / Case :
- ISOPLUS220™
- Drain to Source Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- Supplier Device Package :
- ISOPLUS220™
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 8A
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Obsolete
- Current Rating :
- 14A
- Datasheets
- IXFC14N60P

N-Channel Tube 630m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V ISOPLUS220™
IXFC14N60P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 42A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFC14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXFC14N60P Applications
There are a lot of IXYS
IXFC14N60P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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