IXFC80N10

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Mfr.Part #
IXFC80N10
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 100V 80A ISOPLUS220
Stock
5,778
In Stock :
5,778

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Package :
Tube
DS Breakdown Voltage-Min :
100 V
Avalanche Energy Rating (Eas) :
2500 mJ
Surface Mount :
No
Terminal Position :
Single
Product Status :
Obsolete
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Supplier Device Package :
ISOPLUS220™
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Published :
2001
Base Product Number :
IXFC80N10
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
20V
Mount :
Through Hole
JESD-609 Code :
e1
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
100V
Element Configuration :
Single
Number of Pins :
3
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
31 ns
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Manufacturer :
IXYS Corporation
ECCN Code :
EAR99
Reach Compliance Code :
Compliant
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
100V
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.0125Ohm
Package Shape :
RECTANGULAR
Rise Time :
75ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
230W Tc
Series :
HiPerFET™
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSIP-T3
RoHS Status :
RoHS Compliant
Pulsed Drain Current-Max (IDM) :
320 A
Case Connection :
Isolated
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Pbfree Code :
yes
Pin Count :
3
Continuous Drain Current (ID) :
80A
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
12.5m Ω @ 40A, 10V
Turn-Off Delay Time :
95 ns
Mounting Type :
Through Hole
Power Dissipation (Max) :
230W (Tc)
Package / Case :
ISOPLUS220™
Power Dissipation :
230W
Datasheets
IXFC80N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC80N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:ISOPLUS220™, IXFC80N10 pinout, IXFC80N10 datasheet PDF, IXFC80N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC80N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC80N10


N-Channel Tube 12.5m Ω @ 40A, 10V ±20V 4800pF @ 25V 180nC @ 10V 100V ISOPLUS220™

IXFC80N10 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 4800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 95 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 320 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFC80N10 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 320 A.
a 100V drain to source voltage (Vdss)


IXFC80N10 Applications


There are a lot of IXYS
IXFC80N10 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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