IXFC80N10
- Mfr.Part #
- IXFC80N10
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 80A ISOPLUS220
- Stock
- 5,778
- In Stock :
- 5,778
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 100 V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Surface Mount :
- No
- Terminal Position :
- Single
- Product Status :
- Obsolete
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Supplier Device Package :
- ISOPLUS220™
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Published :
- 2001
- Base Product Number :
- IXFC80N10
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 31 ns
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Manufacturer :
- IXYS Corporation
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.0125Ohm
- Package Shape :
- RECTANGULAR
- Rise Time :
- 75ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 230W Tc
- Series :
- HiPerFET™
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSIP-T3
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Case Connection :
- Isolated
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 80A
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 40A, 10V
- Turn-Off Delay Time :
- 95 ns
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 230W (Tc)
- Package / Case :
- ISOPLUS220™
- Power Dissipation :
- 230W
- Datasheets
- IXFC80N10

N-Channel Tube 12.5m Ω @ 40A, 10V ±20V 4800pF @ 25V 180nC @ 10V 100V ISOPLUS220™
IXFC80N10 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 4800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 95 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 320 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFC80N10 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 320 A.
a 100V drain to source voltage (Vdss)
IXFC80N10 Applications
There are a lot of IXYS
IXFC80N10 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















