IXFC80N085

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Mfr.Part #
IXFC80N085
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 85V 80A ISOPLUS220
Stock
36,746
In Stock :
36,746

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
230W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Vgs (Max) :
±20V
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 4mA
Base Product Number :
IXFC80N085
Rise Time :
75ns
Package / Case :
ISOPLUS220™
JESD-30 Code :
R-PSIP-T3
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Power Dissipation :
230W
Surface Mount :
No
Terminal Position :
Single
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
85 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Published :
2004
Number of Terminations :
3
Number of Elements :
1
Supplier Device Package :
ISOPLUS220™
Product Status :
Obsolete
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Feature :
--
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Mounting Type :
Through Hole
Number of Terminals :
3
Manufacturer :
IXYS Corporation
Series :
HiPerFET™
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Drain to Source Breakdown Voltage :
85V
Fall Time (Typ) :
31 ns
Rds On (Max) @ Id, Vgs :
11m Ω @ 40A, 10V
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Package :
Tube
Turn-Off Delay Time :
95 ns
Continuous Drain Current (ID) :
80A
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Drain to Source Voltage (Vdss) :
85V
Case Connection :
Isolated
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
RoHS Status :
RoHS Compliant
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation (Max) :
230W (Tc)
Drain-source On Resistance-Max :
0.011Ohm
Pulsed Drain Current-Max (IDM) :
75A
Datasheets
IXFC80N085
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC80N085 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS220™, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFC80N085 pinout, IXFC80N085 datasheet PDF, IXFC80N085 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC80N085 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC80N085


N-Channel Tube 11m Ω @ 40A, 10V ±20V 4800pF @ 25V 180nC @ 10V 85V ISOPLUS220™

IXFC80N085 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=85V. And this device has 85V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 95 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 75A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 85 V in order to maintain normal operation.Operating this transistor requires a 85V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFC80N085 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 75A.
a 85V drain to source voltage (Vdss)


IXFC80N085 Applications


There are a lot of IXYS
IXFC80N085 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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