IXFC80N085

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pin Count :

3

Fall Time (Typ) :

31 ns

RoHS Status :

RoHS Compliant

Power Dissipation (Max) :

230W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Surface Mount :

No

Product Status :

Obsolete

Base Product Number :

IXFC80N085

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Supplier Device Package :

ISOPLUS220™

Pulsed Drain Current-Max (IDM) :

75A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Avalanche Energy Rating (Eas) :

1000 mJ

Vgs (Max) :

±20V

JESD-30 Code :

R-PSIP-T3

Drain to Source Breakdown Voltage :

85V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS Corporation

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Published :

2004

Case Connection :

Isolated

Number of Elements :

1

Package Shape :

RECTANGULAR

Number of Terminations :

3

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 4mA

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

85 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.011Ohm

Turn-Off Delay Time :

95 ns

Series :

HiPerFET™

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

80A

Package :

Tube

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Terminal Position :

Single

Package / Case :

ISOPLUS220™

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

Number of Terminals :

3

Power Dissipation :

230W

Rise Time :

75ns

Number of Pins :

3

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

85V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

230W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE