IXFC80N08

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

75A

JESD-609 Code :

e1

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

RoHS Status :

RoHS Compliant

Pin Count :

3

Transistor Element Material :

SILICON

FET Feature :

--

ECCN Code :

EAR99

Number of Elements :

1

Drain to Source Breakdown Voltage :

80V

Gate to Source Voltage (Vgs) :

20V

Series :

HiPerFET™

Qualification Status :

Not Qualified

Power Dissipation (Max) :

230W (Tc)

Package / Case :

ISOPLUS220™

Turn-Off Delay Time :

95 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.009Ohm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

80A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

230W Tc

Surface Mount :

No

Fall Time (Typ) :

31 ns

Drain to Source Voltage (Vdss) :

80V

Manufacturer :

IXYS Corporation

Package Shape :

RECTANGULAR

Product Status :

Obsolete

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Number of Terminals :

3

Supplier Device Package :

ISOPLUS220™

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

1000 mJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

80 V

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 4mA

Base Product Number :

IXFC80N08

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Power Dissipation :

230W

Vgs (Max) :

±20V

Rise Time :

75ns

Number of Terminations :

3

Mount :

Through Hole

Published :

2003

FET Type :

N-Channel