IXFC80N08

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Mfr.Part #
IXFC80N08
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 80V 80A ISOPLUS220
Stock
2,266
In Stock :
2,266

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Fall Time (Typ) :
31 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSIP-T3
Drain-source On Resistance-Max :
0.009Ohm
Case Connection :
Isolated
Manufacturer :
IXYS Corporation
Power Dissipation (Max) :
230W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Avalanche Energy Rating (Eas) :
1000 mJ
Pbfree Code :
yes
Power Dissipation :
230W
Terminal Position :
Single
Package :
Tube
Vgs(th) (Max) @ Id :
4V @ 4mA
Pulsed Drain Current-Max (IDM) :
75A
Drain to Source Breakdown Voltage :
80V
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
HiPerFET™
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
RoHS Compliant
Number of Pins :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Rise Time :
75ns
Mount :
Through Hole
Surface Mount :
No
Number of Terminations :
3
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
80V
Package / Case :
ISOPLUS220™
Pin Count :
3
Product Status :
Obsolete
Supplier Device Package :
ISOPLUS220™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2003
Power Dissipation-Max :
230W Tc
Package Shape :
RECTANGULAR
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mounting Type :
Through Hole
Packaging :
Tube
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Base Product Number :
IXFC80N08
Turn-Off Delay Time :
95 ns
JESD-609 Code :
e1
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
80A
Number of Elements :
1
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
11m Ω @ 40A, 10V
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
80 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Datasheets
IXFC80N08
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC80N08 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:ISOPLUS220™, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFC80N08 pinout, IXFC80N08 datasheet PDF, IXFC80N08 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC80N08 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC80N08


N-Channel Tube 11m Ω @ 40A, 10V ±20V 4800pF @ 25V 180nC @ 10V 80V ISOPLUS220™

IXFC80N08 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=80V, the drain-source breakdown voltage is 80V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 95 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 80 V.In order to operate this transistor, a voltage of 80V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFC80N08 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 75A.
a 80V drain to source voltage (Vdss)


IXFC80N08 Applications


There are a lot of IXYS
IXFC80N08 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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