IXFC74N20P
- Mfr.Part #
- IXFC74N20P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 35A ISOPLUS220
- Stock
- 7,605
- In Stock :
- 7,605
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 120W
- Supplier Device Package :
- ISOPLUS220™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.036Ohm
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Number of Pins :
- 220
- FET Feature :
- --
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 21 ns
- Mounting Type :
- Through Hole
- Package / Case :
- ISOPLUS220™
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 37A, 10V
- Manufacturer :
- IXYS Corporation
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Base Product Number :
- IXFC74N20
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- 5V
- Rise Time :
- 21ns
- Power Dissipation (Max) :
- 120W (Tc)
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2006
- Product Status :
- Obsolete
- Isolation Voltage :
- 2.5kV
- Drain to Source Voltage (Vdss) :
- 200V
- Termination :
- Through Hole
- Drain to Source Breakdown Voltage :
- 200V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Case Connection :
- Isolated
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Dual Supply Voltage :
- 200V
- Power Dissipation-Max :
- 120W Tc
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 60 ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Continuous Drain Current (ID) :
- 35A
- JESD-609 Code :
- e1
- Reverse Recovery Time :
- 200 ns
- Packaging :
- Tube
- Number of Terminals :
- 3
- Series :
- PolarHT™ HiPerFET™
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Pbfree Code :
- yes
- Package :
- Box
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- DS Breakdown Voltage-Min :
- 200 V
- RoHS Status :
- RoHS Compliant
- Nominal Vgs :
- 5 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 200A
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXFC74N20P

N-Channel Tube 36m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V ISOPLUS220™
IXFC74N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 200A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFC74N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IXFC74N20P Applications
There are a lot of IXYS
IXFC74N20P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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