IXFC74N20P
- Mfr.Part #
- IXFC74N20P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 35A ISOPLUS220
- Stock
- 7,605
- In Stock :
- 7,605
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- ISOPLUS220™
- Number of Terminations :
- 3
- Packaging :
- Tube
- Number of Terminals :
- 3
- REACH SVHC :
- No SVHC
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Isolation Voltage :
- 2.5kV
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 200A
- Series :
- PolarHT™ HiPerFET™
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2006
- Reverse Recovery Time :
- 200 ns
- Package / Case :
- ISOPLUS220™
- Polarity/Channel Type :
- N-Channel
- Package :
- Box
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Nominal Vgs :
- 5 V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 60 ns
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 120W (Tc)
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 37A, 10V
- Fall Time (Typ) :
- 21 ns
- Pin Count :
- 3
- Termination :
- Through Hole
- Drain-source On Resistance-Max :
- 0.036Ohm
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 200V
- Power Dissipation :
- 120W
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Drain to Source Breakdown Voltage :
- 200V
- FET Feature :
- --
- Element Configuration :
- Single
- Number of Pins :
- 220
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Obsolete
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXFC74N20
- Power Dissipation-Max :
- 120W Tc
- JESD-30 Code :
- R-PSIP-T3
- Manufacturer :
- IXYS Corporation
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Number of Elements :
- 1
- Rise Time :
- 21ns
- Threshold Voltage :
- 5V
- Continuous Drain Current (ID) :
- 35A
- Drain to Source Voltage (Vdss) :
- 200V
- DS Breakdown Voltage-Min :
- 200 V
- Datasheets
- IXFC74N20P

N-Channel Tube 36m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V ISOPLUS220™
IXFC74N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 200A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFC74N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IXFC74N20P Applications
There are a lot of IXYS
IXFC74N20P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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