IXFC60N20

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Mfr.Part #
IXFC60N20
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 200V 60A ISOPLUS220
Stock
32,738
In Stock :
32,738

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Terminal Position :
Single
Fall Time (Typ) :
26 ns
Input Capacitance (Ciss) (Max) @ Vds :
5200pF @ 25V
Qualification Status :
Not Qualified
Published :
2001
Turn-Off Delay Time :
85 ns
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.033 Ω
Vgs (Max) :
±20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
200V
Manufacturer :
IXYS Corporation
Number of Elements :
1
Packaging :
Tube
Pin Count :
3
Product Status :
Obsolete
JESD-609 Code :
e1
DS Breakdown Voltage-Min :
200 V
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
230W Tc
Rds On (Max) @ Id, Vgs :
33m Ω @ 30A, 10V
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
230W (Tc)
Number of Terminals :
3
Mount :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Element Configuration :
Single
Package :
Tube
Base Product Number :
IXFC60N20
Vgs(th) (Max) @ Id :
4V @ 4mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSIP-T3
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation :
230W
Continuous Drain Current (ID) :
60A
Avalanche Energy Rating (Eas) :
1000 mJ
RoHS Status :
RoHS Compliant
Rise Time :
63ns
Pulsed Drain Current-Max (IDM) :
240A
Transistor Application :
SWITCHING
Supplier Device Package :
ISOPLUS220™
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Case Connection :
Isolated
Gate to Source Voltage (Vgs) :
20V
Package / Case :
ISOPLUS220™
Series :
HiPerFET™
Drain to Source Voltage (Vdss) :
200V
Datasheets
IXFC60N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC60N20 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:ISOPLUS220™, IXFC60N20 pinout, IXFC60N20 datasheet PDF, IXFC60N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC60N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC60N20


N-Channel Tube 33m Ω @ 30A, 10V ±20V 5200pF @ 25V 155nC @ 10V 200V ISOPLUS220™

IXFC60N20 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 240A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFC60N20 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 240A.
a 200V drain to source voltage (Vdss)


IXFC60N20 Applications


There are a lot of IXYS
IXFC60N20 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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