IXFC60N20
- Mfr.Part #
- IXFC60N20
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 60A ISOPLUS220
- Stock
- 32,738
- In Stock :
- 32,738
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Obsolete
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Case Connection :
- Isolated
- Number of Terminals :
- 3
- Drain to Source Breakdown Voltage :
- 200V
- Transistor Element Material :
- SILICON
- Package / Case :
- ISOPLUS220™
- Power Dissipation (Max) :
- 230W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 26 ns
- Series :
- HiPerFET™
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 25V
- Power Dissipation :
- 230W
- RoHS Status :
- RoHS Compliant
- Drain-source On Resistance-Max :
- 0.033 Ω
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Supplier Device Package :
- ISOPLUS220™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 200 V
- Published :
- 2001
- Continuous Drain Current (ID) :
- 60A
- Manufacturer :
- IXYS Corporation
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 85 ns
- JESD-609 Code :
- e1
- Terminal Form :
- THROUGH-HOLE
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Power Dissipation-Max :
- 230W Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Surface Mount :
- No
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 30A, 10V
- Rise Time :
- 63ns
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 240A
- Base Product Number :
- IXFC60N20
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Datasheets
- IXFC60N20

N-Channel Tube 33m Ω @ 30A, 10V ±20V 5200pF @ 25V 155nC @ 10V 200V ISOPLUS220™
IXFC60N20 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 240A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFC60N20 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 240A.
a 200V drain to source voltage (Vdss)
IXFC60N20 Applications
There are a lot of IXYS
IXFC60N20 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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