IXFC52N30P

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Mfr.Part #
IXFC52N30P
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 300V 24A ISOPLUS220
Stock
16,949
In Stock :
16,949

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Case Connection :
Isolated
Package :
Box
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Rds On (Max) @ Id, Vgs :
75m Ω @ 26A, 10V
JESD-30 Code :
R-PSIP-T3
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
300V
Base Product Number :
IXFC52N30
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate to Source Voltage (Vgs) :
20V
Published :
2008
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
20 ns
Drain-source On Resistance-Max :
0.075Ohm
Product Status :
Obsolete
Rise Time :
22ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
3490pF @ 25V
Manufacturer :
IXYS Corporation
Package / Case :
ISOPLUS220™
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5V @ 4mA
DS Breakdown Voltage-Min :
300 V
Power Dissipation-Max :
100W Tc
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
1000 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
150A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation (Max) :
100W (Tc)
Number of Terminals :
3
Surface Mount :
No
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Continuous Drain Current (ID) :
24A
JESD-609 Code :
e1
Mount :
Through Hole
Element Configuration :
Single
Pin Count :
3
Series :
PolarHT™ HiPerFET™
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Power Dissipation :
100W
Drain to Source Breakdown Voltage :
300V
Lead Free :
Lead Free
FET Type :
N-Channel
Number of Elements :
1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Turn-Off Delay Time :
60 ns
Supplier Device Package :
ISOPLUS220™
Datasheets
IXFC52N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFC52N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:ISOPLUS220™, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFC52N30P pinout, IXFC52N30P datasheet PDF, IXFC52N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFC52N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFC52N30P


N-Channel Tube 75m Ω @ 26A, 10V ±20V 3490pF @ 25V 110nC @ 10V 300V ISOPLUS220™

IXFC52N30P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3490pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 24A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Peak drain current for this device is 150A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFC52N30P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150A.
a 300V drain to source voltage (Vdss)


IXFC52N30P Applications


There are a lot of IXYS
IXFC52N30P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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