IXFC52N30P
- Mfr.Part #
- IXFC52N30P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 24A ISOPLUS220
- Stock
- 16,949
- In Stock :
- 16,949
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Case Connection :
- Isolated
- Package :
- Box
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 26A, 10V
- JESD-30 Code :
- R-PSIP-T3
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 300V
- Base Product Number :
- IXFC52N30
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 20 ns
- Drain-source On Resistance-Max :
- 0.075Ohm
- Product Status :
- Obsolete
- Rise Time :
- 22ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 3490pF @ 25V
- Manufacturer :
- IXYS Corporation
- Package / Case :
- ISOPLUS220™
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- DS Breakdown Voltage-Min :
- 300 V
- Power Dissipation-Max :
- 100W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 150A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 100W (Tc)
- Number of Terminals :
- 3
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Continuous Drain Current (ID) :
- 24A
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Element Configuration :
- Single
- Pin Count :
- 3
- Series :
- PolarHT™ HiPerFET™
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 100W
- Drain to Source Breakdown Voltage :
- 300V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 60 ns
- Supplier Device Package :
- ISOPLUS220™
- Datasheets
- IXFC52N30P

N-Channel Tube 75m Ω @ 26A, 10V ±20V 3490pF @ 25V 110nC @ 10V 300V ISOPLUS220™
IXFC52N30P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3490pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 24A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Peak drain current for this device is 150A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFC52N30P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150A.
a 300V drain to source voltage (Vdss)
IXFC52N30P Applications
There are a lot of IXYS
IXFC52N30P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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