IXFC40N30Q
- Mfr.Part #
- IXFC40N30Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 300V ISOPLUS220
- Stock
- 23,933
- In Stock :
- 23,933
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSIP-T3
- Terminal Finish :
- TIN SILVER COPPER
- Number of Terminals :
- 3
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Operating Temperature :
- --
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Drain-source On Resistance-Max :
- 0.08Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- ISOPLUS220™
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- --
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 300V
- Series :
- --
- Case Connection :
- Isolated
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- --
- Published :
- 2013
- FET Feature :
- --
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 300V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 160A
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- --
- Surface Mount :
- No
- Power Dissipation (Max) :
- --
- Base Product Number :
- IXFC40N30
- Package Shape :
- RECTANGULAR
- Operating Temperature (Max) :
- 150°C
- Supplier Device Package :
- ISOPLUS220™
- Drain Current-Max (Abs) (ID) :
- 36A
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Datasheets
- IXFC40N30Q

N-Channel Tube -- 300V ISOPLUS220™
IXFC40N30Q Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 36A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 160A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).
IXFC40N30Q Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)
IXFC40N30Q Applications
There are a lot of IXYS
IXFC40N30Q applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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