IXFC40N30Q
- Mfr.Part #
- IXFC40N30Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 300V ISOPLUS220
- Stock
- 23,933
- In Stock :
- 23,933
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- --
- Product Status :
- Obsolete
- Current - Continuous Drain (Id) @ 25°C :
- --
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Temperature (Max) :
- 150°C
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 300V
- Case Connection :
- Isolated
- Supplier Device Package :
- ISOPLUS220™
- Published :
- 2013
- Operating Temperature :
- --
- Pulsed Drain Current-Max (IDM) :
- 160A
- JESD-30 Code :
- R-PSIP-T3
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.08Ohm
- Manufacturer :
- IXYS Corporation
- Series :
- --
- Power Dissipation (Max) :
- --
- Mount :
- Through Hole
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- --
- Package :
- Tube
- Drain Current-Max (Abs) (ID) :
- 36A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- TIN SILVER COPPER
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 300V
- JESD-609 Code :
- e1
- Package / Case :
- ISOPLUS220™
- Base Product Number :
- IXFC40N30
- Datasheets
- IXFC40N30Q

N-Channel Tube -- 300V ISOPLUS220™
IXFC40N30Q Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 36A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 160A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).
IXFC40N30Q Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)
IXFC40N30Q Applications
There are a lot of IXYS
IXFC40N30Q applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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