IXFC40N30Q
- Mfr.Part #
- IXFC40N30Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 300V ISOPLUS220
- Stock
- 23,933
- In Stock :
- 23,933
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- --
- Number of Terminals :
- 3
- Product Status :
- Obsolete
- Drain to Source Voltage (Vdss) :
- 300V
- Operating Temperature (Max) :
- 150°C
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS Corporation
- Vgs(th) (Max) @ Id :
- --
- FET Feature :
- --
- Number of Terminations :
- 3
- Packaging :
- Tube
- Case Connection :
- Isolated
- Published :
- 2013
- FET Type :
- N-Channel
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Base Product Number :
- IXFC40N30
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Package / Case :
- ISOPLUS220™
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.08Ohm
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Power Dissipation (Max) :
- --
- Drain Current-Max (Abs) (ID) :
- 36A
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- TIN SILVER COPPER
- DS Breakdown Voltage-Min :
- 300V
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-PSIP-T3
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- --
- Series :
- --
- Supplier Device Package :
- ISOPLUS220™
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 160A
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- --
- Datasheets
- IXFC40N30Q

N-Channel Tube -- 300V ISOPLUS220™
IXFC40N30Q Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 36A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 160A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).
IXFC40N30Q Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)
IXFC40N30Q Applications
There are a lot of IXYS
IXFC40N30Q applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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