IXFC36N50P
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- Mfr.Part #
- IXFC36N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 19A ISOPLUS220
- Stock
- 4,622
- In Stock ：
- 4,622
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminations :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form :
- THROUGH-HOLE
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 18A, 10V
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSIP-T3
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 500V
- Current Rating :
- 36A
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 19A
- Number of Terminals :
- 3
- Product Status :
- Obsolete
- Transistor Element Material :
- SILICON
- Base Product Number :
- IXFC36N50
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 23ns
- Turn-Off Delay Time :
- 82 ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Power Dissipation :
- 156W
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 156W Tc
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 156W (Tc)
- Fall Time (Typ) :
- 23 ns
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Package Shape :
- RECTANGULAR
- Voltage - Rated DC :
- 500V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- HiPerFET™, PolarHT™
- Manufacturer :
- IXYS Corporation
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 100 A
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Supplier Device Package :
- ISOPLUS220™
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- Isolated
- Package / Case :
- ISOPLUS220™
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.19 Ω
- Package :
- Tube
- Published :
- 2006
- Datasheets
- IXFC36N50P
IXFC36N50P Documents
N-Channel Tube 190m Ω @ 18A, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V ISOPLUS220™
IXFC36N50P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5500pF @ 25V.This device conducts a continuous drain current (ID) of 19A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 82 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 100 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 100 A.
a 500V drain to source voltage (Vdss)
IXFC36N50P Applications
There are a lot of IXYS
IXFC36N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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