IXFC36N50P
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- Mfr.Part #
- IXFC36N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 19A ISOPLUS220
- Stock
- 4,622
- In Stock ：
- 4,622
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Supplier Device Package :
- ISOPLUS220™
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Vgs (Max) :
- ±30V
- Rise Time :
- 23ns
- Turn-Off Delay Time :
- 82 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Series :
- HiPerFET™, PolarHT™
- Current Rating :
- 36A
- Power Dissipation (Max) :
- 156W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Package / Case :
- ISOPLUS220™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 500V
- Case Connection :
- Isolated
- Power Dissipation :
- 156W
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.19 Ω
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Base Product Number :
- IXFC36N50
- Power Dissipation-Max :
- 156W Tc
- Pulsed Drain Current-Max (IDM) :
- 100 A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Voltage (Vdss) :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 500V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 19A
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 23 ns
- Mounting Type :
- Through Hole
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 18A, 10V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- --
- Manufacturer :
- IXYS Corporation
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- IXFC36N50P
N-Channel Tube 190m Ω @ 18A, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V ISOPLUS220™
IXFC36N50P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5500pF @ 25V.This device conducts a continuous drain current (ID) of 19A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 82 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 100 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 100 A.
a 500V drain to source voltage (Vdss)
IXFC36N50P Applications
There are a lot of IXYS
IXFC36N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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