IXFC36N50P
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- Mfr.Part #
- IXFC36N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 19A ISOPLUS220
- Stock
- 4,622
- In Stock ：
- 4,622
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 82 ns
- Case Connection :
- Isolated
- Terminal Form :
- THROUGH-HOLE
- FET Feature :
- --
- Mount :
- Through Hole
- JESD-609 Code :
- e1
- Drain-source On Resistance-Max :
- 0.19 Ω
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 36A
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 100 A
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- 500V
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Package :
- Tube
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation :
- 156W
- Drain to Source Breakdown Voltage :
- 500V
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 156W (Tc)
- DS Breakdown Voltage-Min :
- 500 V
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 18A, 10V
- Package / Case :
- ISOPLUS220™
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- ISOPLUS220™
- Surface Mount :
- No
- Pbfree Code :
- yes
- Published :
- 2006
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 156W Tc
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 19A
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Base Product Number :
- IXFC36N50
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Series :
- HiPerFET™, PolarHT™
- Number of Elements :
- 1
- Rise Time :
- 23ns
- Fall Time (Typ) :
- 23 ns
- Manufacturer :
- IXYS Corporation
- Datasheets
- IXFC36N50P
N-Channel Tube 190m Ω @ 18A, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V ISOPLUS220™
IXFC36N50P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5500pF @ 25V.This device conducts a continuous drain current (ID) of 19A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 82 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 100 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 100 A.
a 500V drain to source voltage (Vdss)
IXFC36N50P Applications
There are a lot of IXYS
IXFC36N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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