IRGS8B60KPBF
- Mfr.Part #
- IRGS8B60KPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT, 11A, 600V, N-CHANNEL
- Stock
- 1,900
- In Stock :
- 1,900
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case Connection :
- COLLECTOR
- Rise Time :
- 22ns
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Test Condition :
- 400V, 8A, 50 Ω, 15V
- Current - Collector Pulsed (Icm) :
- 34A
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 4.572mm
- Gate-Emitter Voltage-Max :
- 20V
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 2.2V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn Off Time-Nom (toff) :
- 220 ns
- Current Rating :
- 28A
- IGBT Type :
- NPT
- Input Type :
- Standard
- Voltage - Rated DC :
- 600V
- Length :
- 10.668mm
- Number of Elements :
- 1
- Power Dissipation :
- 167W
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Transistor Element Material :
- SILICON
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Gate Charge :
- 29nC
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 8A
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- IRGS8B60KPBF
- Fall Time-Max (tf) :
- 56ns
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Turn On Time :
- 43 ns
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- ECCN Code :
- EAR99
- Width :
- 9.65mm
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Transistor Application :
- Motor Control
- Published :
- 2004
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 600V
- Switching Energy :
- 160μJ (on), 160μJ (off)
- Td (on/off) @ 25°C :
- 23ns/140ns
- Max Collector Current :
- 28A
- Max Power Dissipation :
- 167W
- Datasheets
- IRGS8B60KPBF

IRGS8B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS8B60KPBF Description
IRGS8B60KPBF is a type of insulated gate bipolar transistor manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its 10μs short circuit SOA, it is able to increase the margin for the short circuit protection scheme. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides rugged transient performance based on square RBSOA and high ILM- rating.
IRGS8B60KPBF Features
Benchmark efficiency for motor control
Rugged transient performance
Low EMI
Excellent current sharing in parallel operation
IRGS8B60KPBF Applications
Industrial motor drive
UPS
Solar inverters
Welding
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