IRGS14C40L
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- Mfr.Part #
- IRGS14C40L
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 430V 20A 125W D2PAK
- Stock
- 41,430
- In Stock ：
- 41,430
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Turn On Time :
- 3700 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 430V
- Td (on/off) @ 25°C :
- 900ns/6μs
- Terminal Finish :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Gate Charge :
- 27nC
- Surface Mount :
- yes
- Published :
- 2000
- Input Type :
- Logic
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -40°C~175°C TJ
- Polarity/Channel Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Terminal Position :
- Single
- Power - Max :
- 125W
- Terminal Form :
- Gull wing
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- AUTOMOTIVE IGNITION
- Additional Feature :
- LOW SATURATION VOLTAGE
- Number of Terminations :
- 2
- Vce(on) (Max) @ Vge, Ic :
- 1.75V @ 5V, 14A
- Current - Collector (Ic) (Max) :
- 20A
- Datasheets
- IRGS14C40L
IRGS14C40L datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS14C40L Description
The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and
Gate-Collector which provide over voltage protection capability in ignition circuits.
IRGS14C40L Features
Most Rugged in Industry
Logic-Level Gate Drive
> 6KV ESD Gate Protection
Low Saturation Voltage
High Self-clamped Inductive Switching Energy
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