IRGS14C40LPBF
- Mfr.Part #
- IRGS14C40LPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGNITION IGBT
- Stock
- 13,576
- In Stock :
- 13,576
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- JESD-609 Code :
- e3
- Height :
- 4.699mm
- Width :
- 4.83mm
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 6 μs
- Length :
- 10.668mm
- Base Part Number :
- IRGS14C40LPBF
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Voltage (VCEO) :
- 1.75V
- Power Dissipation :
- 125W
- Additional Feature :
- LOW SATURATION VOLTAGE
- Gate-Emitter Thr Voltage-Max :
- 2.2V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 125W
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rise Time :
- 2.8ns
- Terminal Form :
- Gull wing
- Transistor Application :
- AUTOMOTIVE IGNITION
- Gate Charge :
- 27nC
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Collector Emitter Saturation Voltage :
- 1.4V
- Turn On Time :
- 3700 ns
- Vce(on) (Max) @ Vge, Ic :
- 1.75V @ 5V, 14A
- Transistor Element Material :
- SILICON
- Input Type :
- Logic
- Number of Terminations :
- 2
- Gate-Emitter Voltage-Max :
- 12V
- Turn On Delay Time :
- 900 ns
- Current Rating :
- 14A
- Radiation Hardening :
- No
- Packaging :
- Tube
- Max Collector Current :
- 20A
- Td (on/off) @ 25°C :
- 900ns/6μs
- Collector Emitter Breakdown Voltage :
- 430V
- RoHS Status :
- RoHS Compliant
- Published :
- 2000
- Operating Temperature :
- -40°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 9 Weeks
- Element Configuration :
- Single
- Voltage - Rated DC :
- 430V
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Datasheets
- IRGS14C40LPBF

IRGS14C40LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS14C40LPBF Description
A MOS gatedD X-channel logic level device from the advanced IGBT technology family is designed for coil-on-plug automobile ignition applications and small-engine ignition circuits. On-chip active voltage clamps between the Gate-imitter and Gate-gollector enable excessive voltage safety in ignition circuits, which is a unique feature.
IRGS14C40LPBF Features
?Industry's Most Rugged
?Logic-Level Gate Logic-Level Gate Logic-Level Gate Logic-Level
?b iSD Gate Protection at 6KV
?Saturation Voltage Is Low
?High inergy of self-clamped snductive switching
?Lead-Pree
IRGS14C40LPBF Applications
Switching applications
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