IRGS10B60KDTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

2

Terminal Form :

Gull wing

Gate Charge :

38nC

Factory Lead Time :

13 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Published :

2013

Max Power Dissipation :

156W

Radiation Hardening :

No

Max Collector Current :

22A

Peak Reflow Temperature (Cel) :

260

Turn On Time :

50 ns

Element Configuration :

Single

Mounting Type :

Surface Mount

Reverse Recovery Time :

90 ns

Test Condition :

400V, 10A, 47 Ω, 15V

Number of Pins :

3

Collector Emitter Breakdown Voltage :

600V

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Collector Emitter Voltage (VCEO) :

2.2V

Power - Max :

156W

Number of Elements :

1

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

276 ns

Transistor Element Material :

SILICON

Base Part Number :

IRGS10B60KDPBF

Transistor Application :

Motor Control

IGBT Type :

NPT

Input Type :

Standard

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Switching Energy :

140μJ (on), 250μJ (off)

Td (on/off) @ 25°C :

30ns/230ns

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 10A

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

44A