IRGS14C40LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Length :

10.668mm

Max Power Dissipation :

125W

Base Part Number :

IRGS14C40LPBF

Height :

4.699mm

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

9 Weeks

Collector Emitter Saturation Voltage :

1.4V

Mounting Type :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

1.75V @ 5V, 14A

Input Type :

Logic

Gate Charge :

27nC

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Width :

4.83mm

Current Rating :

14A

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

430V

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2000

Packaging :

Tube

Radiation Hardening :

No

Operating Temperature :

-40°C~175°C TJ

Td (on/off) @ 25°C :

900ns/6μs

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Voltage-Max :

12V

Collector Emitter Voltage (VCEO) :

1.75V

Power Dissipation :

125W

Lead Free :

Lead Free

Number of Terminations :

2

Termination :

SMD/SMT

Number of Elements :

1

Element Configuration :

Single

Mount :

Surface Mount

Turn-Off Delay Time :

6 μs

Transistor Application :

AUTOMOTIVE IGNITION

Turn On Delay Time :

900 ns

Max Collector Current :

20A

Number of Pins :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

3700 ns

Rise Time :

2.8ns

JESD-609 Code :

e3

Voltage - Rated DC :

430V

REACH SVHC :

No SVHC

Gate-Emitter Thr Voltage-Max :

2.2V

Terminal Finish :

MATTE TIN OVER NICKEL

Terminal Form :

Gull wing

Additional Feature :

LOW SATURATION VOLTAGE