IRGS10B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Voltage-Max :

20V

Current - Collector Pulsed (Icm) :

44A

Switching Energy :

140μJ (on), 250μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 10A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

1.8V

Height :

4.699mm

Number of Terminations :

2

Reverse Recovery Time :

90 ns

Voltage - Rated DC :

600V

Width :

9.652mm

Max Power Dissipation :

156W

Current Rating :

22A

Test Condition :

400V, 10A, 47 Ω, 15V

IGBT Type :

NPT

Transistor Application :

Motor Control

Length :

10.668mm

Mount :

Surface Mount

Gate Charge :

38nC

Gate-Emitter Thr Voltage-Max :

5.5V

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

30ns/230ns

Collector Emitter Voltage (VCEO) :

2.2V

JESD-609 Code :

e3

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

20ns

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Power Dissipation :

156W

Number of Elements :

1

Turn Off Time-Nom (toff) :

276 ns

Terminal Form :

Gull wing

Turn On Time :

50 ns

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2012

Element Configuration :

Single

Max Collector Current :

22A

Base Part Number :

IRGS10B60KDPBF

Packaging :

Tube

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

600V

Factory Lead Time :

13 Weeks

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free