IRGS10B60KDPBF
- Mfr.Part #
- IRGS10B60KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT W/ULTRAFAST SOFT RECOVERY D
- Stock
- 34,510
- In Stock :
- 34,510
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Test Condition :
- 400V, 10A, 47 Ω, 15V
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Reverse Recovery Time :
- 90 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 10A
- Max Power Dissipation :
- 156W
- Width :
- 9.652mm
- Gate Charge :
- 38nC
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Voltage - Rated DC :
- 600V
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Saturation Voltage :
- 1.8V
- Base Part Number :
- IRGS10B60KDPBF
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Current Rating :
- 22A
- Radiation Hardening :
- No
- Turn Off Time-Nom (toff) :
- 276 ns
- Number of Terminations :
- 2
- Switching Energy :
- 140μJ (on), 250μJ (off)
- Gate-Emitter Voltage-Max :
- 20V
- Max Collector Current :
- 22A
- Input Type :
- Standard
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Packaging :
- Tube
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Polarity/Channel Type :
- N-Channel
- Published :
- 2012
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 10.668mm
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Turn On Time :
- 50 ns
- IGBT Type :
- NPT
- Terminal Form :
- Gull wing
- Height :
- 4.699mm
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- Motor Control
- Power Dissipation :
- 156W
- Current - Collector Pulsed (Icm) :
- 44A
- Transistor Element Material :
- SILICON
- Rise Time :
- 20ns
- Collector Emitter Breakdown Voltage :
- 600V
- Td (on/off) @ 25°C :
- 30ns/230ns
- Datasheets
- IRGS10B60KDPBF

IRGS10B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS4610DTRRPBF Description
IRGS4610DTRRPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide high efficiency in motor drive applications. Due to its 5μs short circuit SOA, it enables a short circuit protection scheme. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications.
IRGS4610DTRRPBF Features
5μs short circuit SOA
Square RBSOA
Positive VCE(ON) temperature coefficient
Low VCE(ON) and switching losses
Package: D2‐Pak
Maximum junction temperature 175°C
IRGS4610DTRRPBF Applications
Appliance drives
Inverters
UPS
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