IRGS15B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 15A

Number of Elements :

1

Test Condition :

400V, 15A, 22 Ω, 15V

Base Part Number :

IRGS15B60KDPBF

Width :

9.652mm

Input Type :

Standard

IGBT Type :

NPT

Terminal Form :

Gull wing

Height :

4.572mm

Turn On Time :

52 ns

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

600V

Factory Lead Time :

16 Weeks

Collector Emitter Voltage (VCEO) :

2.2V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power - Max :

208W

Length :

10.668mm

Time@Peak Reflow Temperature-Max (s) :

30

Switching Energy :

220μJ (on), 340μJ (off)

Td (on/off) @ 25°C :

34ns/184ns

REACH SVHC :

No SVHC

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Additional Feature :

ULTRA FAST

Power Dissipation :

139W

Max Power Dissipation :

208W

Case Connection :

COLLECTOR

Transistor Application :

Motor Control

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn Off Time-Nom (toff) :

231 ns

Gate Charge :

56nC

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Current - Collector Pulsed (Icm) :

62A

Gate-Emitter Thr Voltage-Max :

5.5V

Max Collector Current :

31A

Collector Emitter Saturation Voltage :

1.8V

Reverse Recovery Time :

92 ns

Radiation Hardening :

No

Gate-Emitter Voltage-Max :

20V

Rise Time-Max :

25ns

ECCN Code :

EAR99

Packaging :

Tube