IRG4RC10UDTRP
- Mfr.Part #
- IRG4RC10UDTRP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 8.5A 38W DPAK
- Stock
- 4,936
- In Stock :
- 4,936
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Power - Max :
- 38W
- Turn Off Time-Nom (toff) :
- 345 ns
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Pulsed (Icm) :
- 34A
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Base Part Number :
- IRG4RC10UDPBF
- Polarity/Channel Type :
- N-Channel
- Switching Energy :
- 140μJ (on), 120μJ (off)
- Transistor Application :
- POWER CONTROL
- JEDEC-95 Code :
- TO-252AA
- Reach Compliance Code :
- Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 5A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Test Condition :
- 480V, 5A, 100 Ω, 15V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 17 Weeks
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Reverse Recovery Time :
- 28ns
- Additional Feature :
- LOW CONDUCTION LOSS
- Turn On Time :
- 56 ns
- Published :
- 1999
- Current - Collector (Ic) (Max) :
- 8.5A
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge :
- 15nC
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Td (on/off) @ 25°C :
- 40ns/87ns
- Packaging :
- Tape and Reel (TR)
- Input Type :
- Standard
- Case Connection :
- COLLECTOR
- Datasheets
- IRG4RC10UDTRP

IRG4RC10UDTRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4RC10UDTRP Description
The IRG4RC10UDTRP IGBT is optimized for medium operating frequencies (8-40 kHz in Harding switching,>200 kHz in resonant mode.)
IRG4RC10UDTRP Features
-
Generation 4 IGBTs offer the highest efficiencies available
-
IGBTs optimized for specific application conditions
-
HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
-
Lower losses than MOSFET's conduction and Diode losses
IRG4RC10UDTRP Applications
-
Industrial
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