IRG4BC10KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Test Condition :

480V, 5A, 100 Ω, 15V

Height :

8.77mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

19nC

Published :

2000

Number of Terminations :

3

Width :

4.69mm

Transistor Application :

Motor Control

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Input Type :

Standard

Power Dissipation :

38W

Max Power Dissipation :

38W

Max Collector Current :

9A

Rise Time :

32ns

Mounting Type :

Through Hole

Additional Feature :

LOW CONDUCTION LOSS

Switching Energy :

250μJ (on), 140μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.62V @ 15V, 5A

Length :

10.5156mm

Number of Pins :

3

Turn-Off Delay Time :

100 ns

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

6.5V

Mount :

Through Hole

Turn On Time :

78 ns

Termination :

Through Hole

Gate-Emitter Voltage-Max :

20V

Collector Emitter Voltage (VCEO) :

2.62V

ECCN Code :

EAR99

Turn Off Time-Nom (toff) :

410 ns

Lead Free :

Contains Lead, Lead Free

Collector Emitter Saturation Voltage :

2.39V

Element Configuration :

Single

Turn On Delay Time :

46 ns

Packaging :

Tube

Case Connection :

COLLECTOR

Package / Case :

TO-220-3

Radiation Hardening :

No

Voltage - Rated DC :

600V

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Current Rating :

9A

Fall Time-Max (tf) :

210ns

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

49ns/97ns

Current - Collector Pulsed (Icm) :

18A