IRG4BC10KPBF

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Mfr.Part #
IRG4BC10KPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 9A 38W TO220AB
Stock
4,453
In Stock :
4,453

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Rise Time :
24ns
Switching Energy :
160μJ (on), 100μJ (off)
Current - Collector (Ic) (Max) :
9A
Current Rating :
8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
9A
Power Dissipation :
38W
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
600V
Published :
2000
Element Configuration :
Single
Supplier Device Package :
TO-220AB
Packaging :
Tube
Td (on/off) @ 25°C :
11ns/51ns
Collector Emitter Saturation Voltage :
2.62V
Min Operating Temperature :
-55°C
Current - Collector Pulsed (Icm) :
18A
Number of Pins :
3
Radiation Hardening :
No
Power - Max :
38W
Input Type :
Standard
Package / Case :
TO-220-3
Gate Charge :
19nC
Collector Emitter Breakdown Voltage :
600V
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
38W
Test Condition :
480V, 5A, 100Ohm, 15V
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
2.62V
Max Operating Temperature :
150°C
Voltage - Rated DC :
600V
Mount :
Through Hole
RoHS Status :
RoHS Compliant
Vce(on) (Max) @ Vge, Ic :
2.62V @ 15V, 5A
Datasheets
IRG4BC10KPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC10KPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IRG4BC10KPBF pinout, IRG4BC10KPBF datasheet PDF, IRG4BC10KPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC10KPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC10KPBF


IRG4BC10KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC10KPBF                Description

 

IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics.

 

 


IRG4BC10KPBF                     Features


·Short Circuit Rated UltraFastOptimized for high operating frequencies >5.0 kHz and Short Circuit Rated to 10us @125°CVG=15V

·Generation 41GBT design provides higher efficiency than Generation 3

Industry standard TO-220AB package

·Lead-Free

 


IRG4BC10KPBF                    Applications


electronic applications

consumer electronics

industrial technology

 


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