IRG4BC10UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

3

Package / Case :

TO-220-3

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Packaging :

Tube

Turn On Time :

56 ns

JEDEC-95 Code :

TO-220AB

Rise Time :

16ns

Weight :

6.000006g

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Test Condition :

480V, 5A, 100 Ω, 15V

Collector Emitter Saturation Voltage :

2.6V

Td (on/off) @ 25°C :

40ns/87ns

Max Power Dissipation :

38W

Collector Emitter Breakdown Voltage :

600V

Published :

2000

Turn-Off Delay Time :

87 ns

Max Collector Current :

8.5A

Current Rating :

8.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

38W

Length :

10.5156mm

REACH SVHC :

No SVHC

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 5A

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Reverse Recovery Time :

28 ns

Gate-Emitter Voltage-Max :

20V

Collector Emitter Voltage (VCEO) :

2.6V

Radiation Hardening :

No

Gate-Emitter Thr Voltage-Max :

6V

Width :

4.69mm

ECCN Code :

EAR99

Fall Time-Max (tf) :

210ns

Turn Off Time-Nom (toff) :

345 ns

Gate Charge :

15nC

Factory Lead Time :

16 Weeks

Number of Elements :

1

Input Type :

Standard

Turn On Delay Time :

40 ns

Current - Collector Pulsed (Icm) :

34A

Height :

15.24mm

Voltage - Rated DC :

600V

Element Configuration :

Single

Mount :

Through Hole

Switching Energy :

140μJ (on), 120μJ (off)