IRG4BC10SD-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

1.8V

Element Configuration :

Single

Published :

2000

Test Condition :

480V, 8A, 100 Ω, 15V

Number of Terminations :

2

Collector Emitter Saturation Voltage :

1.58V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.668mm

Current - Collector Pulsed (Icm) :

18A

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A

Peak Reflow Temperature (Cel) :

260

Height :

4.699mm

JESD-609 Code :

e3

Current Rating :

14A

Factory Lead Time :

13 Weeks

Mount :

Surface Mount

ECCN Code :

EAR99

Radiation Hardening :

No

Packaging :

Tube

Voltage - Rated DC :

600V

Number of Elements :

1

Td (on/off) @ 25°C :

76ns/815ns

Reverse Recovery Time :

28 ns

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOW CONDUCTION LOSS

Transistor Application :

POWER CONTROL

Rise Time :

36ns

Width :

9.65mm

Turn On Time :

106 ns

JESD-30 Code :

R-PSSO-G2

Input Type :

Standard

Max Collector Current :

14A

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Switching Energy :

310μJ (on), 3.28mJ (off)

Max Power Dissipation :

38W

Time@Peak Reflow Temperature-Max (s) :

30

Turn Off Time-Nom (toff) :

1780 ns

Lead Free :

Lead Free

Power Dissipation :

38W

Gate Charge :

15nC

Number of Pins :

3

Collector Emitter Breakdown Voltage :

600V

Case Connection :

COLLECTOR