IRG4BC10SD-S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Collector (Ic) (Max) :

14A

Terminal Finish :

TIN LEAD

Switching Energy :

310μJ (on), 3.28mJ (off)

Packaging :

Tube

Reverse Recovery Time :

28ns

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Test Condition :

480V, 8A, 100 Ω, 15V

Current - Collector Pulsed (Icm) :

18A

Peak Reflow Temperature (Cel) :

225

Number of Elements :

1

Number of Terminations :

2

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A

Turn Off Time-Nom (toff) :

1780 ns

Gate Charge :

15nC

Td (on/off) @ 25°C :

76ns/815ns

Additional Feature :

LOW CONDUCTION LOSS

Power - Max :

38W

Operating Temperature :

-55°C~150°C TJ

Published :

2001

Transistor Element Material :

SILICON

JESD-609 Code :

e0

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Input Type :

Standard

Turn On Time :

106 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

600V

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Surface Mount :

yes