IRG4BC10K

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power Dissipation-Max (Abs) :

38W

Number of Elements :

1

Test Condition :

480V, 5A, 100 Ω, 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power - Max :

38W

Fall Time-Max (tf) :

210ns

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.62V @ 15V, 5A

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Gate Charge :

19nC

Switching Energy :

160μJ (on), 100μJ (off)

Transistor Application :

Motor Control

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

18A

RoHS Status :

Non-RoHS Compliant

Turn On Time :

78 ns

Current - Collector (Ic) (Max) :

9A

Packaging :

Tube

ECCN Code :

EAR99

Published :

2000

Turn Off Time-Nom (toff) :

410 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Voltage - Collector Emitter Breakdown (Max) :

600V

Gate-Emitter Thr Voltage-Max :

6.5V

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Td (on/off) @ 25°C :

11ns/51ns

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Additional Feature :

LOW CONDUCTION LOSS

Terminal Position :

Single

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

Number of Terminations :

3