IRG4BC10SD-LPBF

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Mfr.Part #
IRG4BC10SD-LPBF
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
IGBT 600V 14A 38W TO262
Stock
5,518
In Stock :
5,518

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Max Collector Current :
14A
Reach Compliance Code :
Unknown
Collector Emitter Voltage (VCEO) :
1.8V
Current Rating :
14A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Element Configuration :
Single
Rise Time :
32ns
Vce(on) (Max) @ Vge, Ic :
1.8V @ 15V, 8A
Number of Pins :
3
Collector Emitter Breakdown Voltage :
600V
Collector Emitter Saturation Voltage :
1.8V
Packaging :
Tube
Current - Collector Pulsed (Icm) :
18A
Voltage - Rated DC :
600V
Td (on/off) @ 25°C :
76ns/815ns
Mounting Type :
Through Hole
Gate Charge :
15nC
Reverse Recovery Time :
28 ns
Max Power Dissipation :
38W
Input Type :
Standard
Test Condition :
480V, 8A, 100 Ω, 15V
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
RoHS Status :
RoHS Compliant
Switching Energy :
310μJ (on), 3.28mJ (off)
Published :
2004
Power Dissipation :
38W
Datasheets
IRG4BC10SD-LPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC10SD-LPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, IRG4BC10SD-LPBF pinout, IRG4BC10SD-LPBF datasheet PDF, IRG4BC10SD-LPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC10SD-LPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC10SD-LPBF


IRG4BC10SD-LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC10SD-LPBF Description


IRG4BC10SD-LPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which offers the highest efficiencies available. As a Generation 4 IGBT,  it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with Generation 3. The IRG4BC10SD-LPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.



IRG4BC10SD-LPBF Features


Industry-standard TO-262 packages

Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available

Higher efficiency



IRG4BC10SD-LPBF Applications


Industrial motor drive

Solar inverters

Welding 


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