IRG4BC10SD-L
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- Mfr.Part #
- IRG4BC10SD-L
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IGBT 600V 14A 38W TO262
- Stock
- 44,153
- In Stock ：
- 44,153
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 8A
- Power - Max :
- 38W
- Published :
- 2001
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge :
- 15nC
- Td (on/off) @ 25°C :
- 76ns/815ns
- Reverse Recovery Time :
- 28ns
- Switching Energy :
- 310μJ (on), 3.28mJ (off)
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Current - Collector Pulsed (Icm) :
- 18A
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Input Type :
- Standard
- Packaging :
- Tube
- Test Condition :
- 480V, 8A, 100 Ω, 15V
- Current - Collector (Ic) (Max) :
- 14A
- Datasheets
- IRG4BC10SD-L
IRG4BC10SD-L datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC10SD-L Description
IRG4BC10SD-L is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for specific application conditions. As a Generation 4 IGBT, it is able to offer the highest efficiencies available, and lower losses than MOSFET's conduction and diode losses. This IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Its HEXFRED diodes are optimized for performance with IGBTs.
IRG4BC10SD-L Features
Industry-standard D2Pak & TO-262 packages
Extremely low voltage drop 1.1Vtyp. @ 2A
Extremely tight Vce(on) distribution
Minimizes power dissipation at up to 3 kHz PWM frequency in inverter drives, up to 4 kHz in brushless DC drives
Highest efficiencies available
IRG4BC10SD-L Applications
Industrial motor drive
Solar inverters
Welding
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