IRG4BC10S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Additional Feature :

LOW CONDUCTION LOSS

Time@Peak Reflow Temperature-Max (s) :

30

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Turn Off Time-Nom (toff) :

1780 ns

Current - Collector Pulsed (Icm) :

18A

Terminal Position :

Single

Turn On Time :

106 ns

Switching Energy :

140μJ (on), 2.58mJ (off)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Form :

Gull wing

Input Type :

Standard

Current - Collector (Ic) (Max) :

14A

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

600V

Gate Charge :

15nC

Package / Case :

TO-220-3

Td (on/off) @ 25°C :

25ns/630ns

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Surface Mount :

yes

Transistor Application :

POWER CONTROL

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

COLLECTOR

Power - Max :

38W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2007

Test Condition :

480V, 8A, 100 Ω, 15V

Number of Elements :

1