IRG4RC10STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

38W

Switching Energy :

140μJ (on), 2.58mJ (off)

Power Dissipation :

38W

Max Breakdown Voltage :

600V

Collector Emitter Voltage (VCEO) :

1.8V

Max Operating Temperature :

150°C

Number of Pins :

3

Element Configuration :

Single

Gate Charge :

15nC

Published :

2007

RoHS Status :

RoHS Compliant

Input Type :

Standard

Base Part Number :

IRG4RC10SPBF

Test Condition :

480V, 8A, 100Ohm, 15V

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

25ns/630ns

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

1.7V

Power - Max :

38W

Current - Collector Pulsed (Icm) :

18A

Radiation Hardening :

No

Voltage - Collector Emitter Breakdown (Max) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

14A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A

Mount :

Surface Mount

Max Collector Current :

14A

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

D-Pak