IRG4RC10K
- Mfr.Part #
- IRG4RC10K
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 9A 38W DPAK
- Stock
- 38,211
- In Stock :
- 38,211
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Polarity/Channel Type :
- N-Channel
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- RoHS Status :
- Non-RoHS Compliant
- Td (on/off) @ 25°C :
- 11ns/51ns
- Input Type :
- Standard
- Published :
- 2001
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- IRG4RC10K
- Gate Charge :
- 19nC
- Test Condition :
- 480V, 5A, 100 Ω, 15V
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- Single
- JEDEC-95 Code :
- TO-252AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Pulsed (Icm) :
- 18A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector (Ic) (Max) :
- 9A
- Turn Off Time-Nom (toff) :
- 417 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.62V @ 15V, 5A
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Terminal Position :
- Single
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Transistor Application :
- Motor Control
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Power - Max :
- 38W
- Number of Terminations :
- 2
- Switching Energy :
- 160μJ (on), 100μJ (off)
- Turn On Time :
- 38 ns
- Datasheets
- IRG4RC10K

IRG4RC10K datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4RC10K Description
A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.
IRG4RC10K Features
·Short Circuit Rated UltraFast:Optimized for high operating frequencies>5.0 kHzand Short Circuit Rated to 10us @125°CVGE=15V
·Generation 4 1GBT design provides higher efficiency than Generation 3
·Industry standard TO-252AA package
IRG4RC10K Applications
·AM tuner RF amplifier low-noise amplifier
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