IRG4PSC71UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

600V

Current - Collector Pulsed (Icm) :

200A

REACH SVHC :

No SVHC

Turn Off Time-Nom (toff) :

503 ns

Reverse Recovery Time :

82 ns

Mount :

Through Hole

Width :

5.3mm

Transistor Application :

POWER CONTROL

Additional Feature :

LOW CONDUCTION LOSS

Max Junction Temperature (Tj) :

150°C

Packaging :

Tube

Factory Lead Time :

13 Weeks

Rise Time :

94ns

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1.95V

Termination :

Through Hole

Length :

16.1mm

Voltage - Rated DC :

600V

Switching Energy :

3.26mJ (on), 2.27mJ (off)

Turn On Delay Time :

90 ns

Max Collector Current :

85A

Number of Terminations :

3

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

600V

Test Condition :

480V, 60A, 5 Ω, 15V

Height :

24.8mm

Continuous Collector Current :

85A

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 60A

Published :

1999

Number of Elements :

1

Max Power Dissipation :

350W

Number of Pins :

3

Package / Case :

TO-274AA

Gate Charge :

340nC

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

245 ns

Input Type :

Standard

Td (on/off) @ 25°C :

90ns/245ns

Current Rating :

85A

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Power Dissipation :

350W

Turn On Time :

179 ns